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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen peroxide oxidation catalyzed by heteropoly acids combined with cetylpyridinium chloride. Epoxidation of olefins and allylic alcohols, ketonization of alcohols and diols, and oxidative cleavage of 1,2-diols and olefins (1988)
    s.l. : American Chemical Society
    The @journal of organic chemistry 53 (1988), S. 3587-3593 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00250a032
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  • 2
    Electronic Resource
    Electronic Resource
    Multiple oscillation of whispering-gallery-mode dye lasers in green and orange regions using mixed-dye-doped solid microspheres (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7957-7959 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mixed-dye-doped solid microspheres are excited by a transversely excited-atmospheric ultraviolet N2 laser to obtain a multiple oscillation of a whispering-gallery-mode (WGM) dye laser in both green and orange regions. The multiple oscillation exhibits separate modes of WGMs in both spectral regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353950
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  • 3
    Electronic Resource
    Electronic Resource
    Changes in the density of ultrathin silicon oxide films related to excess Si atoms near the oxide–Si(100) interface (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1108-1112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To clarify the considerable changes in the (volumetric) density ρox of 3.5–8.0-nm-thick silicon oxide films on Si(100) oxidized at 800–950 °C, which were confirmed by our previous work, ρoxs and (areal) number densities of the 700–750 °C oxidation films were investigated. The ρoxs and number densities of Si and O atoms were determined by charged-particle activation analysis and Rutherford backscattering spectrometry, respectively. It was confirmed again that excess Si atoms relative to the stoichiometric SiO2 composition exist near the oxide–Si substrate interface and the number densities of them NSi(excess)s were changed with oxidation temperature. The ρoxs were also changed with oxidation temperature but the changes in ρox were diametrically contrasted with those in NSi(excess). For the 2.0–8.0-nm-thick films oxidized at 700–950 °C, the ρox characteristics exhibited a maximum at 850 °C but the NSi(excess) ones exhibited a minimum at 850 °C. It is, therefore, believed that this ρox change is governed mainly by microscopic changes in the atomic arrangement structure due to the NSi(excess) difference. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425423
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  • 4
    Electronic Resource
    Electronic Resource
    A selection rule in SiHn(n=1–4)+F reactions: An ab initio molecular orbital study (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 2844-2847 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Reactions of SiHn(n=1–4) with a fluorine atom were studied by using an ab initio molecular orbital method [fourth-order Møller–Plesset (MP4/6-21G**//second-order Møller–Plesset MP2/6-21G**)]. Structures of the transition states were determined. In the cases of SiH3+F and SiH+F, fluorine atom addition to a silicon atom was a favorable reaction at the singlet state and abstraction of a hydrogen by a fluorine atom was a favorable route at the triplet state. Abstraction of a hydrogen was also favorable at the doublet state in the case of SiH2+F. A selection rule of these reactions on the basis of the atomic spin density on each atom was proposed. The selection rule proposed was proved to also be applicable to the reaction CH3+F.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464113
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  • 5
    Electronic Resource
    Electronic Resource
    Density difference related to humidity during dry oxidation for ultrathin silicon oxide films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5968-5974 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The densities of 3.5–6.5-nm-thick silicon oxide films grown on p-type Si(100) at humidities during dry oxidation of 0.5–1.0, 10–100 ppb and 200–500 ppm were determined by charged-particle activation analysis. It was confirmed that the density increases with decreasing humidity and its level is separated into two groups: an ultradry oxidation group that includes the films oxidized at a humidity of less than 100 ppb and a conventional dry oxidation group at a humidity of more than 200 ppm. Since similar humidity dependence was confirmed for several fundamental structural and electrical evaluations, the oxide becomes a homogeneous stoichiometric SiO2 compound and its quality approaches an intrinsic level by dehydrating. These strong similarities also suggest that all the humidity dependence possibly originates from a common cause—the slight microscopic structural change in the oxide near the interfaces. By dehydrating, therefore, its atomic arrangement may be efficiently transferred to a more stable state, and then consequently, the earlier humidity dependence would be confirmed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371641
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  • 6
    Electronic Resource
    Electronic Resource
    Low-noise high-response prebreakdown current measurement system (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3641-3643 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The electrical prebreakdown currents in liquid and solid dielectrics under a highly nonuniform electric field condition have been measured successfully using an electro-optical current measuring system in conjunction with a 760-ns rectangular high-voltage pulse generator. The breakdown time lag was precisely measured from the current. The discharge propagation velocity was estimated from the linear relation to formative time lag and gap spacing to be 18 km/s in liquid nitrogen at +40-kV point voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144243
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  • 7
    Electronic Resource
    Electronic Resource
    Inexpensive operating system for whispering-gallery-mode laser using dye-doped solid small spheres (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 628-631 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple and inexpensive system is reported for a whispering-gallery-mode (WGM) laser using a dye-doped solid small sphere. A WGM laser is pumped by a compact transversely excited atmospheric (TEA) UV N2 laser. Experiments using the inexpensive system and some features in the WGM laser are demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144188
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  • 8
    Electronic Resource
    Electronic Resource
    Ultradry oxidation system equipped with a newly designed gas preheating unit for growing ultrathin silicon oxide films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3501-3504 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A practical thermal oxidation system used in ultradry, ultrathin silicon oxide film growth is described. It comprises a double-wall-type fused-quartz reactor, a newly designed material-gas preheating unit, and three vacuum chambers for dehydrating and exchanging wafers. The preheating unit, used to eliminate temperature disturbances in the reactor, is assembled with a SiC composite shrouded by fused quartz and an infrared lamp heater. The temperature of material gases is quickly elevated to about 600 °C by passing them through this unit just before reaching the reactor's gas inlet. Consequently, the temperature of Si wafers in the reactor can be precisely controlled within ±0.15° at 800 °C. Moreover, the moisture concentration (humidity) in the reactor is always kept below 1 ppb. By rigorously controlling the growth temperature and ambience, high-reliability 5.0±0.05-nm-thick oxide films are obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144528
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature measurements of a birefringent substrate (LiNbO3) in a radio frequency discharge by laser interferometry (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 267-268 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Temperatures of a birefringent substrate (LiNbO3) have been measured by laser interferometry in a 13.56 MHz rf discharge. The measurement method is based on monitoring the variation of natural birefringence with temperature. The transient temperature rises and equilibrium values are investigated in nitrogen plasma at rf powers of ∼86 W. Owing to the large heat capacity per unit area of the substrate, the time constant of temperature rises is about ten times as large as the previously reported value of a polymer substrate (PMMA).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144739
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  • 10
    Electronic Resource
    Electronic Resource
    Norepinephrine triggers Ca2+-dependent exocytosis of 5-hydroxytryptamine from rat pinealocytes in culture (2002)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 81 (2002), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: 5-Hydroxytryptamine (5-HT) is a precursor and a putative modulator for melatonin synthesis in mammalian pinealocytes. 5-HT is present in organelles distinct from l-glutamate-containing synaptic-like microvesicles as well as in the cytoplasm of pinealocytes, and is secreted upon stimulation by norepinephrine (NE) to enhance serotonin N-acetyltransferase activity via the 5-HT2 receptor. However, the mechanism underlying the secretion of 5-HT from pinealocytes is unknown. In this study, we show that NE-evoked release of 5-HT is largely dependent on Ca2+ in rat pinealocytes in culture. Omission of Ca2+ from the medium and incubation of pineal cells with EGTA-tetraacetoxymethyl-ester inhibited by 59 and 97% the NE-evoked 5-HT release, respectively. Phenylephrine also triggered the Ca2+-dependent release of 5-HT, which was blocked by phentolamine, an α antagonist, but not by propranolol, a β antagonist. Botulinum neurotoxin type E cleaved 25 kDa synaptosomal-associated protein and inhibited by 50% of the NE-evoked 5-HT release. Bafilomycin A1, an inhibitor of vacuolar H+-ATPase, and reserpine and tetrabenazine, inhibitors of vesicular monoamine transporter, all decreased the storage of vesicular 5-HT followed by inhibition of the NE-evoked 5-HT release. Agents that trigger l-glutamte exocytosis such as acetylcholine did not trigger any Ca2+-dependent 5-HT release. Vice versa neither NE nor phenylephrine caused synaptic-like microvesicle-mediated l-glutamate exocytosis. These results indicated that upon stimulation of a adrenoceptors pinealocytes secrete 5-HT through a Ca2+-dependent exocytotic mechanism, which is distinct from the exocytosis of synaptic-like microvesicles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.2002.00839.x
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