Electronic Resource
Springer
The European physical journal
147 (1957), S. 271-276
ISSN:
1434-601X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Then-type diode characteristics of natural galena change over top- type after heat treatment in H2S. These galena surfaces treated with H2S were found to show transistor action and photovoltaic effects also. A study of the cleaved surfaces of such galena crystals after heat treatment in H2S revealed that the spreading resistance Rs increases upto a certain depth, below the outer surface indicating the existence of a high resistivity layer. On removing surface layers by carefully scraping with sand paper (a) the rectifying characteristics improved, and (b) photovoltaic effects could be observed. Under these conditions transistor action with current gain=0.83 and voltage gain of about 4 could be obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01333097
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