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  • 1995-1999  (1)
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  • 1965-1969  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2559-2561 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work ballistic electron emission microscopy was used to probe on nanometer scale the local Schottky barrier height in metal-semiconductor (MS) contacts with an intentionally inhomogeneously prepared metallization. Schottky barrier maps of heterogeneous Au/Co/ GaAs67P33(100)-Schottky contacts show areas with different barrier heights which can be correlated to different metallizations (Au or Co) at the interface. The local Schottky barrier height of the Co patches depends on their lateral extension. This result can be explained by the theory of the potential pinch-off effect in inhomogeneous MS contacts. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 224 (1969), S. 156-171 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The field at the center of a Lorentz-sphere due to all dipoles within this sphere has been calculated, assuming inhomogeneous orientations of the dipoles in the sphere, as one must expect in real crystals. This field has very often been neglected. The calculation shows the existence of a coupling field which stiffens the dipole directions against localized torques due to “distortion fields”. In the case of ferromagnetism, one can calculate the coupling field of an expanded Lorentz volume. This is analogous to the quantummechanical exchange field, which is due to the excess exchange energy. In many cases the above dipole coupling field is more important than the wellknown exchange field because the “dipole coupling constants” exceed the exchange constant by orders of magnitude.
    Type of Medium: Electronic Resource
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