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  • 2000-2004  (6)
  • 1975-1979  (1)
  • 2002  (6)
  • 1976  (1)
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  • 2000-2004  (6)
  • 1975-1979  (1)
Year
  • 1
    Electronic Resource
    Electronic Resource
    18-Hydroxy-11-deoxycorticosterone. Chemical synthesis, structure, and circular dichroism (1976)
    s.l. : American Chemical Society
    The @journal of organic chemistry 41 (1976), S. 2552-2556 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00877a010
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Interlayer segregation of Cu atoms in Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve multilayers and its influence on magnetic properties (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3759-3763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results show that the exchange coupling field (Hex) of NiFe/FeMn for Ta/NiFe/FeMn/Ta multilayers is higher than that for spin-valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. In order to find out the reason, the composition and chemical states at the surface of Ta(12 nm)/NiFe(7 nm), Ta(12 nm)/NiFe(7 nm)/Cu(4 nm), and Ta(12 nm)/NiFe(7 nm)/Cu(3 nm)/NiFe(5 nm) were studied using x-ray photoelectron spectroscopy. The results show that no elements from lower layers float out or segregate to the surface in the first and second samples. However, Cu atoms segregate to the surface of Ta(12 nm)/NiFe(7 nm)/Cu(3 nm)/NiFe(5 nm) multilayers, i.e., Cu atoms segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. We believe that the presence of Cu atoms at the interface of NiFe/FeMn is one of the important factors which causes the exchange coupling field (Hex) of Ta/NiFe/Cu/NiFe/FeMn/Ta to be weaker than that of Ta/NiFe/FeMn/Ta. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450033
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 258-264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a physical model to calculate the direct tunneling hole current through ultrathin gate oxides from the inversion layer of metal–oxide–semiconductor field-effect transistors. A parametric self-consistency method utilizing the triangular well approximation is used for the electrostatics of the inversion layer. For hole quantization in the inversion layer, an improved one-band effective mass approximation, which is a good approximation to the rigorous six-band effective mass theory, is used to account for the band-mixing effect. The tunneling probability is calculated by a modified Wentzel–Kramers–Brilliouin (WKB) approximation, which takes the reflections near the Si/SiO2 interfaces into account. It is found that the parabolic dispersion in the SiO2 band gap used in the WKB approximation is only applicable for hole tunneling in oxides thinner than about 2 nm and for low gate voltage. A more reasonable Freeman–Dahlke hole dispersion form with significantly improved fitting to all experimental data for different oxide thickness and gate voltage range is adopted and discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416861
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  • 4
    Electronic Resource
    Electronic Resource
    Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 376-378 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray photoelectron spectroscopy (XPS) was applied to characterize the electronic structures for a series of high-k materials (HfO2)x(Al2O3)1−x grown on (100) Si substrate with different HfO2 mole fraction x. Al 2p, Hf 4f, O 1s core levels spectra, valence band spectra, and O 1s energy loss all show continuous changes with x in (HfO2)x(Al2O3)1−x. These data are used to estimate the energy gap (Eg) for (HfO2)x(Al2O3)1−x, the valence band offset (ΔEν) and the conduction band offset (ΔEc) between (HfO2)x(Al2O3)1−x and the (100) Si substrate. Our XPS results demonstrate that the values of Eg, ΔEν, and ΔEc for (HfO2)x(Al2O3)1−x change linearly with x. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492024
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  • 5
    Electronic Resource
    Electronic Resource
    Interface reaction of Ta/Ni81Fe19 or Ni81Fe19/Ta and its suppression (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 455-457 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ta/Ni81Fe19 and Ni81Fe19/Ta structures are commonly used in the magnetic multilayers with giant magnetoresistance. For a Ta/Ni81Fe19/Ta fundamental structure, Ta seed and Ta cap layers resulted in a loss of moment equivalent to a magnetically dead layer of thickness 1.6±0.2 nm. In order to find out the reason, the composition and chemical states at the interface regions of Ta/Ni81Fe19 and Ni81Fe19/Ta were studied using the x-ray photoelectron spectroscopy and peak decomposition technique. The results show that there are thermodynamically favorable reactions at the Ta/Ni81Fe19 and Ni81Fe19/Ta interfaces: 2Ta+Ni=NiTa2. However, the thickness of a magnetically dead layer was significantly reduced by the insertion of a small amount of Bi in the Ta/Ni81Fe19/Ta structure. This result indicates that a surfactant Bi can suppress the interface reaction in multilayers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433913
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  • 6
    Electronic Resource
    Electronic Resource
    Use of intrathecal morphine for postoperative pain relief after elective laparoscopic colorectal surgery (2002)
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 57 (2002), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Laparoscopic surgery has become popular in recent years, but few studies have addressed analgesia for this type of surgery. We conducted a prospective double-blind randomised trial on 36 cases of laparoscopic colorectal surgery to determine the influence of intrathecal morphine on postoperative pain relief. All patients received a subarachnoid block with local anaesthetic in addition to general anaesthesia. One group also received intrathecal morphine. A patient-controlled analgesic (PCA) device was prescribed for pain control postoperatively and the visual analogue score (VAS) was used for pain assessment. The group who received intrathecal morphine used significantly less morphine. There were no adverse cardiovascular effects of the combined anaesthetic technique. Nausea and vomiting remained the main side-effect of intrathecal morphine but this was easily treated with anti-emetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2044.2002.02873.x
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  • 7
    Electronic Resource
    Electronic Resource
    Antigenic study of Myxobolus rotundus (Myxozoa: Myxosporea) using monoclonal antibodies (2002)
    Oxford UK : Blackwell Science Ltd
    Journal of fish diseases 25 (2002), S. 0 
    Details
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2761.2002.00372.x
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