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  • 1985-1989  (3)
  • 1985  (3)
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  • 1985-1989  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Substrate chemical etching prior to molecular-beam epitaxy: An x-ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4-H2O2-H2O solution (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 806-810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy has been performed in order to investigate the effects of the chemical etching of GaAs {001} surfaces by the H2SO4/H2O2/H2O solution used following the procedure currently practiced in the molecular-beam-epitaxy technique. It is demonstrated that, in contrast to what is generally believed, rinsing in running deionized water after etching does not produce any passivating oxide film on the surface. The surface-oxidized phases are only due to the sample manipulation in air after etching. This oxidation process is enhanced by the sample heating for indium soldering on the sample holder. It is shown that the surface-oxidized phases can be avoided by handling the sample under an inert atmosphere. Results of thermal desorption of the surface-oxidized phases are also given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336175
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Auger electron spectroscopy and electron loss spectroscopy comparative study of vacuum annealing effects on InP surface (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 237-243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Auger electron spectroscopy (AES) and electron loss spectroscopy (ELS) have been performed in order to investigate vacuum annealing effects on InP surface. Both techniques appeared suitable for detecting indium clustering induced by thermal surface decomposition through InM4.5N4.5N4.5 spectrum modifications (AES) and In plasmon excitation (ELS). The formation of In microinclusions at the surface is detected by the two techniques for annealing temperature of 460±30 °C. In addition, AES shows that phosphorus has a complex behavior near the surface involving diffusion from the bulk, surface segregation, and desorption. These competitive mechanisms are shown to result in phosphorus enrichment or depletion of the surface layer depending mainly on the annealing temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334795
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy study of GaAs (001) surface thermocleaning prior to molecular beam epitaxy (1985)
    Springer
    Applied physics 38 (1985), S. 45-47 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 Ef ; 79.60 Eq ; 81.15 Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract X-ray photoelectron spectroscopy has been performed in order to investigate the encapsulent effect of an oxide layer, grown at the end of the chemical etching procedure, on the annealing behaviour of GaAs (001) substrates prior to M.B.E. growth. The oxide layer makes the surface unable to react with arsenic molecules until the desorption of the gallium oxide around 570 °C, preventing the surface against arsenic desorption below this temperature. Otherwise, if unoxidized substrates are used, annealing must be performed under an arsenic flux from 150 °C upwards to avoid the formation of an arsenic depleted surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618725
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    Paper (German National Licenses)
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