Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
58 (1985), S. 4146-4149
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Titanium oxides films of 150–400 nm thickness were deposited on glass and Si substrates by reactive ionized cluster beam deposition. Characteristics of films deposited at different deposition conditions of oxygen partial pressure, ionization current, and acceleration voltage have been examined. The films prepared at an oxygen pressure of 1–2×10−4 Torr showed stoichiometry of TiO2. The film is a mixture of anatase and rutile structures. By increasing the ionization current from 0 to 400 mA, the refractive index of the film could be increased from 2.0 to 2.6. By deposition at a high ionization current, the film showed rutile structure, whereas the anatase structure could be formed at a low ionization current. The optical absorption of the films is low when the films are deposited at a higher acceleration voltage.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.335546
Permalink
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
