ISSN:
1432-0630
Keywords:
66.30.Jt
;
72.80.Cw
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We have observed that hydrogen implantation in p-type boron-doped silicon material induces a neutralization of boron in a 10 μm deep region after the Schottky diodes have been heated at a 90° C temperature under reverse-biasing. The profile of neutralized acceptors can be reversibly shaped by successively applying different reverse biases.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00616479
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