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  • 1
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In order to study the basic mechanism of polarization enhancement realized by the multitilted foil technique, nuclear polarization of short-lived beta-emitter8B(T1/2=769 ms,I π=2+) was induced. Utilizing up to ten tilted foils, the polarization enhancement was measured as a function of the foil numbers. The observed enhancement for8B was combined with the previous results for12B(I π=1+,T 1/2=20 ms) which has the same atomic configurations but different nuclear spin. Analyzing these results in the framework of the classical vector model, the essential features of the enhancement depending on the nuclear spin was disclosed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 2390-2394 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferromagnetic perpendicularly magnetized epitaxial thin films of τ (Mn,Ni)Al have been successfully grown on AlAs/GaAs heterostructures by molecular beam epitaxy. We have investigated the polar Kerr rotation and magnetization of τ MnAl and (Mn,Ni)Al as a function of Mn and Ni concentration. The largest polar Kerr rotation and remnant magnetization were obtained for Mn0.5Al0.5 thin films with values of 0.16° and 224 emu/cm3, respectively. We observed that the Kerr rotation and magnetization remained constant with Ni additions up to about 12 at. % and subsequently decreased with further Ni additions. We discuss these results and one possible method of enhancing the Kerr rotation.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1580-1582 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short light pulse generation from an optically pumped GaAs/AlGaAs quantum well laser is measured. The shortest pulse width achieved so far is less than 1.3 ps. In addition, it is found that the pulse from varies randomly even when the same excitation condition, which results from stochastic behavior of the spontaneous emission coupling to the lasing mode. In order to discuss these results in more detail, spatial dependent rate equations are analyzed in which the stochastic process of the spontaneous emission and the traveling effect of spontaneously generated optical wave packets are included.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5914-5914 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, high-Tc oxide superconductors have been extensively studied because these materials can be applied to various electronic devices, especially highly sensitive magnetic sensors or high-speed switching elements. For such the applications, thin films with superior superconductivity and very smooth surfaces are needed. The purpose of this work is to develop an as-grown technique of Y-Ba-Sr-Cu-O films on comparatively low-temperature substrates by adopting a newly devised alternative sputtering. The sputtering apparatus was constructed by three targets and a substrate holder which was intermittently rotated and stopped facing the desired target. The targets were Y2O, BaO+SrO, and Cu or CuO. The thickness of the oxide layer alternately deposited was adjusted to the thickness of the each metal-oxide monolayer. The substrate used was a (100) plane of a single-crystal MgO. The substrate temperature Ts was changed from 450 to 600 °C. The deposition rate of the each layer was affected by Ts. Especially, the deposition of the CuO layer was very sensitive to conditions of the film growing surface: Ts and/or degree of oxidation. The film composition was adjusted by changing the deposition time of the each layer. The crystal with an oxygen-defective perovskite nucleated even at a Ts of about 500 °C. In the case of sintered bulks, a tetragonal phase was obtained when the content of Sr was comparatively large. In contrast, an orthorhombic phase was stabilized in the sputtered films. As-grown films showed a poor superconductivity. After a post-annealing in 1-atom O2 at a low temperature of about 450 °C, a sharp superconducting transition was observed above 77 K. As we increase the content of Sr, the resistivity of the film became large and semiconductive.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 839-841 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown a novel type of epitaxial metallic multilayers consisting of ultrathin ferromagnetic tetragonal τMnAl and nonmagnetic (CsCl-type) NiAl on (001) GaAs substrates using molecular beam epitaxy. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy (TEM) show that monocrystalline MnAl/NiAl multilayers are formed with the expected epitaxial orientations and that the c axis of the tetragonal structure of the ultrathin MnAl film is aligned perpendicular to the substrate. Composition modulation is clearly evidenced by TEM even when the thickness of each MnAl and NiAl layer is as thin as 3 monolayers. Perpendicular magnetization of the MnAl/NiAl multilayers is shown by both magnetization and magnetotransport measurements at room temperature, exhibiting remarkably square hysteresis loops, high values (Mr(approximately-greater-than)300 emu/cm3) of remanent magnetization, and relatively low values of coercive field (0.2〈Hc〈1 kOe).
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 696-698 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown a new class of epitaxial metallic multilayers consisting of ultrathin ferromagnetic tetragonal MnGa and nonmagnetic (CsCl-type) NiGa on (001) GaAs substrates by molecular beam epitaxy. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy analyses show that MnGa/NiGa multilayers with atomically abrupt interfaces are formed with the expected epitaxial orientations, and, in particular, that the c-axis of the tetragonal structure of the MnGa film is aligned perpendicular to the substrate. Perpendicular magnetization of the MnGa/NiGa multilayers was evidenced by both vibrating sample magnetometer and extraordinary Hall effect measurements at room temperature, with higher values (Mr=267–302 emu/cm3) of remanent magnetization than those of previously reported MnGa and MnAl thin films. The capability of growing this new class of materials will allow a new degree of artificial materials design on semiconductor substrates.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1565-1567 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown ferromagnetic MnGa ultrathin films on GaAs substrates by molecular beam epitaxy. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy show that monocrystalline MnGa films are grown with the c axis of the tetragonal unit cell normal to the (001) GaAs substrates. Both magnetization measurements by vibrating sample magnetometer and extraordinary Hall effect (EHE) measurements indicate perpendicular magnetization, with the remnant magnetization of 225 emu/cm3 and EHE resistivity in the range of 0.5–4 μΩ cm at room temperature. The material possesses properties ideal for certain nonvolatile magnetic memory coupled with underlying III-V circuitry.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Clinical and experimental pharmacology and physiology 20 (1993), S. 0 
    ISSN: 1440-1681
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: 1. We investigated the effect of SA3443, a novel cyclic disulfide compound, on alpha-naphthyl isothiocyanate (ANIT)-induced intrahepatic cholestasis in rats.2. SA3443 given orally at doses of 100 or 300 mg/kg, three times at 4h intervals, dosedependently suppressed the elevation of serum total bilirubin, alkaline phosphatase activity and transaminase activities induced by administration of ANIT (80 mg/kg) 3 h before the second dosages of SA3443.3. SA3443 also significantly inhibited the reduction of bile flow in the ANIT-treated rats.4. These findings indicated that SA3443 had a markedly inhibitory effect on ANIT-induced intrahepatic cholestasis in rats.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 49 (1993), S. 437-439 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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