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  • 1985-1989  (3)
  • 1965-1969
  • 1988  (3)
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  • 1985-1989  (3)
  • 1965-1969
Year
  • 1
    Electronic Resource
    Electronic Resource
    The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etching (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3516-3521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have tried to develop a new procedure to prepare the clean surface of a silicon single crystal. We successfully prepared the contamination free bare silicon surface with ultraviolet cleaning followed by HF dipping with low concentration HF obtained by dilution by organic free ultrapure water, at room temperature under the atmospheric condition. X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and ultraviolet photoelectron spectroscopy measurements proved thus prepared surface has a hydrogen monoatomic layer terminating the dangling bonds of silicon. The hydrogen termination was found to have remarkable passivation effect against surface oxidation reaction. A silicon thin-film epitaxially grown on the prepared surface was confirmed to have perfect crystal structure and high-purity level by scanning electron microscopy, reflection high-energy electron diffraction, Raman spectroscopy and secondary ion mass spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341489
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial growth of silicon at low temperature by ultrahigh vacuum electron cyclotron resonance plasma chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5183-5188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of a silicon thin film has been accomplished at a temperature lower than 650 °C by electron cyclotron resonance plasma chemical vapor deposition using an ultrahigh vacuum chamber. Ar plasma from the same electron cyclotron plasma ion source is also used for surface cleaning of the substrate. The relationship between the cleaning condition of a substrate and the quality of an epitaxially grown silicon film is examined in detail. The energy of Ar plasma in the cleaning process should be kept lower than 100 eV in order to obtain films of good crystal quality. Otherwise, damage by Ar ion bombardment cannot be restored by annealing at lower than 700 °C. The epitaxial growth also should be carried out without the accelerating bias voltage to avoid residual compressive stress in the film. An epitaxial film with perfect crystal structure (indicating only a Kikuchi pattern of reflection of high-energy electron diffraction) is obtained at the substrate temperature of 710 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342429
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Ru L edge x-ray absorption studies of the electronic structure of Ru3(CO)12 adsorption and the formation of Ru–Cu bimetallics on Cu(111) (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 475-477 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ru L2,3 edge XANES (x-ray absorption near edge structure) together with AES (Auger electron spectroscopy) and LEED (low energy electron diffraction) studies of Ru3(CO)12 adsorbed on Cu(111) reveal the following: (a) Ru3(CO)12 adsorbs molecularly on Cu(111) at low temperature ((approximately-less-than)−50°). (b) Upon electron bombardment, Ru3(CO)12 dissociates to form bare Ru aggregates which exhibit very broad Ru L2,3 white lines and featureless absorption in the XANES spectrum indicating that the Ru atoms are not well ordered on the Cu(111) surface. (c) Annealing of the bare Ru aggregates on Cu(111) at 450 °C results in the formation of Cu/Ru bimetallic clusters in which the Ru atoms are in the core and exhibit bulk-like Ru L2,3 XANES while the surface is covered with Cu atoms. Analysis of the Ru L3 white line intensity indicates that charge redistribution in the Ru d band occurs upon the transformation from the bare Ru aggregates to the bimetallic Cu/Ru clusters on Cu(111).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454628
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    Paper (German National Licenses)
    Fulltext
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