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  • 1985-1989  (2)
  • 1988  (2)
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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 388-390 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated an application of a noninvasive optical probe that can independently measure both free sheet charge density and applied voltage in GaAs devices. Large-signal direct-current measurements of voltage and charge were made on a Schottky diode without any assumption of the device parameters. The measurements are reproducible, and no adjustable parameters have been used to quantitatively measure charge and voltage. In addition to a lateral charge resolution, given by the beam spot size, we have observed a longitudinal resolution due to the standing wave in the probe beam.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 7-9 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonzero backside potentials in microwave and digital GaAs circuits lead to small errors in direct electro-optic sampling measurements. We present experimental studies of the magnitude of this error signal as a function of center conductor width for 50 Ω coplanar waveguide transmission lines on a 20 mil substrate. Backside voltages 20 dB below the applied frontside signal are found for typical microwave circuit transmission lines. Calculation of this backside signal with finite difference techniques shows excellent agreement with experiment. Analytic estimates of the backside potential also may be derived in terms of the spatially periodic eigenfunctions for Laplace's equation in the substrate.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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