Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 773-775
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the low-temperature metalorganic chemical vapor deposition of InSb on (001)CdTe. This low-temperature process was carried out by a precracking technique. Epitaxial growth with a substrate temperature as low as 185 °C can be obtained using a simple two-stage heater. The deposited films were examined by double-crystal x-ray diffraction, scanning electron microscope, and energy dispersive analysis of x ray. The films grown at 240 °C are stoichiometric, single crystal, and of specular surface morphology.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99829
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