ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electrical performance of Be-doped, p-p+ GaAs homojunction barriers is characterized and analyzed. The results of the analysis show that minority-carrier electrons, at 300 K, have a mobility of 4760 cm2/V s at a hole concentration of 2.3×1016 cm−3, and that the effective recombination velocity for these homojunction barriers is about 6×104 cm/s. We present evidence that this unexpectedly high recombination velocity is a consequence of an effective reduction in band gap due to the heavy impurity doping. The effective band-gap shrinkage in this Be-doped material grown by molecular-beam epitaxy appears to be comparable to that already observed for Zn-doped GaAs grown by metalorganic chemical vapor deposition. This work demonstrates that so-called band-gap narrowing effects significantly influence the electrical performance of GaAs devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.342102
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