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  • 1985-1989  (4)
  • 1988  (4)
Material
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  • 1985-1989  (4)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6388-6391 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One goal of this work was to develop a reproducible method of preparing high quality Y-Ba-Cu-O superconducting films and to study their properties versus thickness. This was accomplished by rf diode sputtering from a single target. Twenty-seven depositions were made using a target containing 8.9-at. % Y, 37.3-at. % Ba, and 53.8-at. % Cu. Film thicknesses ranged from 0.09 to 2.4 μm. The film compositions obtained were 15.6±1.0-at. % Y, 35.8±1.0-at. % Ba, and 48.7±1.7-at. % Cu for the mean and standard deviation. The films were amorphous as-deposited and crystallized by annealing in O2 at 915 °C. X-ray diffraction, transmission electron microscopy, and scanning electron microscopy indicated that, on (100)SrTiO3 substrates, films with thickness less than ∼0.25 μm were epitaxially oriented with their c axis perpendicular to the substrate. Films on (110)SrTiO3 were oriented with their c axis parallel to the substrate. On (100)SrTiO3, zero resistance was achieved in 30 samples from 27 runs at 85.6±1.4 K with a transition width (10%–90%) of 1.8±1.1 K independent of thickness. Results for deposition on a variety of other substrates were more variable. Diamagnetic shielding of up to 38% was calculated from the initial slope of M vs H. This low value was attributed to the presence of second phases and a significant diffusion layer thickness, both observed by transmission electron microscopy. Critical currents, measured by transport using a four-point probe, reached 8.1×105 A/cm2 at 77.35 K for a 0.2-μm film deposited on (100)SrTiO3 . Comparable values were obtained by calculation from the M-H hysteresis loop, from which we infer that there are either continuous epitaxial sheets of c axis oriented 123 or, if there are grain boundaries, the coupling across them is strong.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2773-2777 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There has been a good deal of interest recently in the applicability of thermal bonding to silicon-on-insultator (SOI) technology. Thermal bonding (also called direct bonding) is accomplished by mating polished, properly hydrolyzed silicon and/or silicon dioxide surfaces, which are then annealed to promote diffusion bonding. In order to produce high-quality SOI layers it must be demonstrated that the interface betweeen the wafers is void-free over the entire surface of the wafer (4-in. wafers in our study). We have found that the standard annealing step which has been used by other groups to form the wafer bond must be followed by a hyperbaric, high-temperature annealing cycle in order to produce interfaces which are completely void-free. In addition, we have found that mating the wafers in a controlled atmosphere is necessary to insure that voids do not remain after the thermal processing is complete. We shall present transmission electron micrographs which reveal the morphology of the bonded interface on an atomic scale. We shall submit C-scan acoustic micrographs and infrared transmission thermographs which display the areal nature of the bonding voids.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5913-5913 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One goal of this work was to develop a reproducible method of preparing high quality Y-Ba-Cu-O superconducting films and to study their properties versus thickness. This was accomplished by rf diode sputtering from a single target. Twenty-seven depositions were made using a target containing 8.9-at. % Y, 37.3-at. % Ba, and 53.8-at. % Cu. Film thicknesses ranged from 0.09 to 2.4 μm. The film compositions obtained were 15.6±1.0-at. % Y, 35.8±1.0-at. % Ba, and 48.7±1.7-at. % Cu for the mean and standard deviation. The films were amorphous as deposited and crystallized by annealing in O2 at 915 °C. X-ray diffraction, transmission electron microscopy, and scanning electron microscopy indicated that, on (100)SrTiO3 substrates, films with thickness less than ∼0.25 μm were epitaxially oriented with their c axis perpendicular to the substrate. Films on (110)SrTiO3 were oriented with their c axis parallel to the substrate. On (100)SrTiO3, zero resistance was achieved in 30 samples from 27 runs at 85.6±1.4 K with a transition width (10%–90%) of 1.8±1.1 K independent of thickness. Results for deposition on a variety of other substrates were more variable. Diamagnetic shielding of up to 38% was calculated from the initial slope of M vs H. This low value was attributed to the presence of second phases and a significant diffusion layer thickness, both observed by transmission electron microscopy. Critical currents, measured by transport using a four-point probe, reached 8.1×105 A/cm2 at 77.35 K for a 0.2-μm film deposited on (100)SrTiO3 . Comparable values were obtained by calculation from the M-H hysteresis loop, from which we infer that there are either continuous epitaxial sheets of c axis oriented 123 or, if there are grain boundaries, the coupling across them is strong.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2068-2070 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the high-temperature superconductor Y-Ba-Cu-O with zero-resistance transition temperatures up to 83 K have been recently reported by using a zirconia buffer layer on the primary materials of interest for electronics, Si and SiO2. In this letter, various characteristics of these films are discussed. Microstructural analysis using transmission electron microscopy shows the complex morphology of the unoriented polycrystalline films. Elemental depth profiling by x-ray photoelectron spectroscopy shows the effectiveness of the zirconia buffer layer in preventing interdiffusion; fluorine is found throughout the film at an abundance of 4 at. % The critical current density was measured as a function of temperature; its value is 5 kA cm−2 at 4.2 K.
    Type of Medium: Electronic Resource
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