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  • 1985-1989  (1)
  • 1988  (1)
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  • 1985-1989  (1)
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    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1964-1966 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new technique for patterning narrow conducting channels in GaAs-AlGaAs two-dimensional electron gas (2DEG) materials. A low-energy He ion beam successfully patterned narrow wires with little or no etching of the thin GaAs cap. The damage propagation of the He ion even at low energies was sufficient to decrease the mobility of the 2DEG located deep within the structure. The damage can be removed by a low-temperature anneal but remains stable at room temperature. Conducting channels as narrow as 300 nm have been fabricated and measured using low-temperature magnetoresistance.
    Type of Medium: Electronic Resource
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