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Variable-range hopping conduction in doped germanium at very low temperatures and high magnetic fields (1988)

Schoepe, W.

Springer

The European physical journal 71 (1988), S. 455-463

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ISSN: 1434-6036

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract The conductivity of doped Ge below the metal-insulator transition is measured at temperatures between 4 K and 40 mK and in magnetic fields up to 7 Tesla. In zero field the resistivity exponent diverges asT −1/2. In weak fields the magnetoresistance increases asB 2 and becomes exponentially large in strong fields and at low temperatures. The results can be described quantitatively in terms of variable-range hopping between localized states having a Coulomb gap in the density of states at the Fermi level. The magnetoresistance is calculated for arbitrary fields by means of a quasi-classical method. A fit to the data gives the radius of the localized states and the density of states. The sample is found to be very close to the metal-insulator transition. A small increase of the binding energy is observed in strong fields.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01313932

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