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  • 1990-1994  (1)
  • 1985-1989  (1)
  • 1991  (1)
  • 1989  (1)
  • Chemistry  (2)
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  • 1990-1994  (1)
  • 1985-1989  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Semi-empirical schemes for x-ray attenuation coefficients in the context of PIXE (1989)
    New York, NY [u.a.] : Wiley-Blackwell
    X-Ray Spectrometry 18 (1989), S. 235-242 
    Details
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Various semi-empirical schemes for generating x-ray attenuation coefficients, μ/ρ, devised primarily for use in electron probe microanalysis, are considered for application in the PIXE analysis of thick specimens where the relevant x-ray energy region is 1-40 keV. Using selected high-accuracy experimental data, it is shown that current theoretical values of μ/ρ agree better with the data than do the various schemes. The errors transmitted into PIXE analysis by use of the theoretical values are estimated, and a new parameterization of these values suitable for microcomputer use is justified and tested.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/xrs.1300180511
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Improved model for the intensity of low-energy tailing in Si(Li) x-ray spectra (1991)
    New York, NY [u.a.] : Wiley-Blackwell
    X-Ray Spectrometry 20 (1991), S. 191-197 
    Details
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Accurate tail-to-peak intensity ratios are extracted from the spectra produced in a Si(Li) detector by x-rays of energies 2-10 keV. The widely used model of a surface layer of incomplete charge collection fails to explain the energy dependence of these data. The model is augmented to include loss of photoelectrons travelling back into the ICC layer from an interaction in the active silicon region; this gives excellent agreement with experiment. It is shown that the detection efficiency in the region of low x-ray energy may be deduced from the tail-to-peak ratios, together with measurement of the thicknesses of the beryllium window and the metal contact; a potential source of error in measuring the latter by the popular fluorescence technique is demonstrated.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/xrs.1300200408
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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