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  • 2000-2004
  • 1990-1994
  • 1985-1989  (4)
  • 1989  (4)
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  • 2000-2004
  • 1990-1994
  • 1985-1989  (4)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Lasing characteristics of 0.8-μm InGaAsP/GaAs lasers fabricated by wet chemical etching (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3767-3772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 0.8-μm InGaAsP/GaAs stripe lasers, in which cavity mirrors were formed by two-step wet chemical etching, have been fabricated monolithically. The laser resonators were aligned along the 〈011¯〉 and the 〈010〉 directions. The first etching was done in 5% Br methanol. The secondary etching was done in H2SO4:H2O2:H2O (3:1:1 by volume) etchant for the active layers only, and gave low threshold lasers. Their threshold current densities were compared with those of the cleaved-mirror lasers made from the same wafer. Some longitudinal lasing modes were observed in the wavelength range of 805–810 nm. The characteristic temperature T0 was 116 K in the temperature range 28–87 °C. The relationship between the state of the etched facets and the near- and far-field patterns was examined. It was found that this two-step etching technique for the laser mirrors is very suitable for aligning the lasers along desirable directions on the same wafer for monolithic integrated optical circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343387
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    New double-heterostructure indium-tin oxide/InGaAsP/AlGaAs surface light-emitting diodes at 650-nm range (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2181-2185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New double-heterostructure indium-tin oxide/InGaAsP/AlGaAs surface light-emitting diodes have been fabricated by liquid-phase epitaxy and rf sputtering methods. In this structure, indium-tin oxide acts as both an n-type cladding layer and a transparent conductor. Peak wavelength and full width at half maximum of the surface emitting spectrum were 653 and 17 nm, respectively. An output power of 1 mW was achieved at a current level of 66 mA, corresponding to a current density of 22 A/cm2 under pulsed operation for the diode with a 400 μm×450 μm emitting area. The optical emission was distributed over the entire emitting area.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344315
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of InGaAsP surface treatment for indium-tin-oxide/InGaAsP/GaAs solar cells (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3337-3341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performances of n-indium-tin-oxide (ITO)/n-InGaAsP/p-GaAs solar cells in which the chemical treatment at the ITO/InGaAsP heterointerface is varied are compared: HNO3 treatment, HCl treatment, and nontreatment. The cells with HNO3 treatment show good solar-cell performance in spite of large lattice mismatch between ITO and InGaAsP. Others do not show even rectifying behavior. The structure of the cells with HNO3 treatment is thought to be a semiconductor-insulator-semiconductor structure, and its current model follows the tunneling model. By Auger analysis the oxide layer, which is thought to be formed by HNO3 treatment, was ascertained. Using the heterostructure back-surface field for the cells with HNO3 treatment, the highest efficiency attained so far is 10.9% (total area) under AM1 illumination normalized to 100 mW/cm2; the corresponding open-circuit voltage, short-circuit current density, and fill factor are 0.56 V, 28.8 mA/cm2, and 0.677, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344130
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    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Species specificity and involvement of other cytokines in endotoxic shock action of recombinant tumour necrosis factor in mice (1989)
    Springer
    Inflammation research 26 (1989), S. 196-198 
    Details
    ISSN: 1420-908X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We compared the effects of human rTNF and murine rTNF in murine models of toxicity, esp. the induction of endotoxic shock. As was the case for the antitumour activity, we found a marked difference in activity between these two TNFs. Only murine rTNF was able to cause lethality, while human rTNF needed the synergistic action of sensitizing agents to become lethal. Further experiments, such as the study of IL-6 induction by TNF in mice, allowed us to distinguish two types of TNF effects: those that can equally well be exerted by human rTNF and by murine rTNF (type I effects) and those that can only be exerted by murine rTNF (type II effects). Both types of effects, the “toxic” (a type I effect) and the sensitizing (a type II effect) are needed to produce a lethal outcome. Other cytokines such as IL-1 and IFN-γ, however, can also exert such a sensitizing effect and consequently lead to a fatal outcome when co-administered with human rTNF.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02126607
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    Paper (German National Licenses)
    Fulltext
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