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  • 2000-2004
  • 1990-1994
  • 1985-1989  (2)
  • 1989  (2)
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  • 2000-2004
  • 1990-1994
  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Dislocation density reduction by isoelectronic impurities in semiconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2009-2011 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mechanism for dislocation density reduction by isoelectronic doping is proposed. It is shown that the strain introduced by randomly distributed dopants lowers the vacancy supersaturation impeding dislocation formation via vacancy condensation. Trends in dislocation reduction through codoping with isoelectronic and electrically active impurities are discussed for the case of GaAs doped with indium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101198
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Amphoteric native defects in semiconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2094-2096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that a new concept of amphoteric native defects with strongly Fermi level dependent defect formation energy provides the basis for a unified explanation of a large variety of phenomena in semiconductors. Formation of Schottky barriers, particle irradiation induced compensation, doping-induced superlattice intermixing, and limits of free-carrier concentration find for the first time a common simple explanation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101174
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
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