ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
The paper describes the characterization by SIMS of thin layers of GaAsxP1 - x between layers of GaP. The investigation aims at quantification of the arsenic concentration, x, in layers with thickness ranging from 20 to 100 nm.The study reveals a nearly constant sensitivity factor in the SIMS quantification of the arsenic content of the GaAsxP1 - x layers. The sensitivity factor was found to be 4.3 × 10-3 over the range x = 0.10-0.75, with no distinct concentration dependence.Depth resolution and decay length λ(0) were measured by analysing the interfaces of the GaAsxP1 - x structures at different primary ion energies (1.5-13 keV). The best depth resolution, 3.2 nm, is obtained at 1.5 keV and the worst, 13 nm, at 13 keV. Decay length evaluations are consistent with a collisional mixing theory for the sputter-induced broadening of an interface.
Additional Material:
5 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740140911
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