Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
65 (1989), S. 4268-4272
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-quality Si epitaxial films have been grown at low temperatures of 600–650 °C using an ArF/XeF excimer laser irradiated normal to the substrate. Crystallinity of the deposited films was characterized by reflection high-energy electron diffraction, Rutherford backscattering, Raman scattering, and secondary ion mass spectroscopy measurements. It was found that the laser irradiation on the growing surface was very effective for the improvement of both film crystallinity and electrical properties. A theoretical analysis of heat diffusion was carried out to clarify the effect of laser irradiation on the film quality. It was found that the photothermal effect of laser irradiation was a dominant factor in the improvement of the film crystallinity.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343311
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