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  • 1990-1994  (2)
  • 1993  (1)
  • 1990  (1)
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  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Lifetime measurements on silicon-on-insulator wafers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 189-190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report noncontact measurements of the effective minority carrier lifetime in the superficial silicon layer of silicon-on-insulator wafers. The carriers are excited by a pulse of short-wavelength photons (λ≤350 nm), all of which are absorbed in the first 500 A(ring) of the silicon layer. The carriers are detected by the change in microwave reflectance in a resonant circuit to which the wafer is coupled. The results obtained vary from ∼3 μs for a three year old separation by implanted oxygen (SIMOX) wafer to ∼25 μs for current vendor SIMOX and bond-etchback samples. The variation in free surface recombination velocity is eliminated by HF passivating the samples prior to measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110395
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Carrier recombination and high-barrier Schottky diodes on silicon (1990)
    Springer
    Applied physics 51 (1990), S. 451-454 
    Details
    ISSN: 1432-0630
    Keywords: 73.30+y ; 73.50.Gr ; 73.40.Ei
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Small-area high-barrier Schottky diodes have a very high dynamic resistance. Consequently, special care is needed when measuring the current-voltage characteristic of such diodes. The reported observation of carrier recombination in the depletion layer of high-barrier IrSi/Si Schottky diodes at room temperature is shown to be due to instrumental loading of the diodes. Careful measurements show that carrier recombination is observed only below 200 K and is dependent on the dimension of the diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324725
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    Paper (German National Licenses)
    Fulltext
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