Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (3)
  • 1990  (3)
Material
Years
  • 1990-1994  (3)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 237-240 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vacuum evaporation of a merocyanine dye, 3-ethyl-5 [2-(3-ethyl-2-benzothiazolidene) ethyldene]-2-thioxo-4-thiazolidione, onto different substrates such as bare and surface-oxidized silicon wafers and a quartz glass substrate is done. There is a difference in color between a film deposited on the bare silicon substrate and one on either a quartz glass plate or a silicon wafer with a thick (96.5-nm) oxide layer. The dye film on quartz has an absorption maximum at 560 nm, whereas that on bare silicon has one at 582 nm. The bare crystalline silicon surface may give dye molecules more opportunity to aggregate than amorphous silicon dioxide or quartz surfaces. The dye molecules are preferentially oriented along the [100] direction of the substrate crystal, with the carbonyl group parallel to and the conjugated aromatic plane perpendicular to the substrate surface, although there is no detectable difference of orientation between the films deposited on these different substrates.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2187-2191 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique is developed to control the chemical reactivity of a silicon single-crystal surface through chemical modification with atomic hydrogen. The reactivity of the reconstructed single-crystal surface prepared by high-temperature treatment in an ultrahigh vacuum is significantly decreased by capping the dangling bonds of top-layer silicon atoms with hydrogen atoms. The Si—H bonds on the hydrogenated surface are found to be much more stable against oxidation than the Si—Si back bonds. The hydrogen-passivated silicon surface is reactivated by electron beam irradiation. An ultrathin oxide layer pattern can be prepared using preferential oxidation of the area reactivated by a focused electron beam.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2890-2893 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamondlike carbon films were prepared by electron cyclotron resonance chemical vapor deposition. Structures of the carbon films were characterized by Raman spectroscopy and Fourier-transform infrared spectroscopy. The relationship between the properties of films and growth conditions has been examined. High-energy ion species extracted from a discharge of methane in the electron cyclotron resonance cavity, which is positively-biased electrically against the earthed substrate, have an important role in the growth behavior of hard diamondlike carbon films.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...