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Influence of substrate temperature on the orientation of YBa2Cu3O7 films (1990)

Shi, W. ; Shi, J. ; Sun, J. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 822-824

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The structural characteristics of YBa2Cu3O7 (YBCO) thin films were investigated by x-ray diffractometry. Films with good preferred orientation (001) and high Tc0 (86–90 K) can be prepared in situ using the dc magnetron sputtering method. For the films prepared on the ZrO2 (stabilized with Y2O3) substrate at a substrate temperature (Ts) less than 700 °C, there are different orientations and the degree of random orientation will decrease with increasing Ts. YBCO films with (001) can be obtained on ZrO2 with different crystal planes, such as (100), (110), and (111) at suitable temperature (760–850 °C). From the results it could be concluded that the YBCO film growth with c-axis orientation mainly depends on the substrate temperature Ts.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.104261

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Digitale Medien

Ultrathin oxide-nitride-oxide films (1990)

Weinberg, Z. A. ; Stein, K. J. ; Nguyen, T. N. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 1248-1250

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: It is demonstrated that the thickness limit of a thin nitride film which can withstand reoxidation is reduced to about 3.5 nm when it is deposited in situ on a thin-deposited oxide film. The deposited oxide apparently provides a better surface for nitride nucleation and initial growth. Using this finding an oxide-nitride-oxide (ONO) film as thin as 4.6 nm was fabricated and shown to have good electrical properties and low defect density. The current leakage through the film was close to the acceptable limit in dynamic-random-access-memory technology. It was also found that electron trapping is substantially higher in ONO films produced by reoxidation than in films having a top deposited oxide.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.103499

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Digitale Medien

Prolongation of the yeast life span by the v-Ha-RAS oncogene (1990)

Chen, J. B. ; Sun, J. ; Jazwinski, S. M.

Oxford, UK : Blackwell Publishing Ltd

Molecular microbiology 4 (1990), S. 0

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ISSN: 1365-2958

Quelle: Blackwell Publishing Journal Backfiles 1879-2005

Thema: Biologie , Medizin

Notizen: The budding yeast Saccharomyces cerevisiae has a finite life span that is defined by the number of times the cell divides. The patterns of expression of certain genes change in a specific manner during the life span, implying that at least some of the manifestations of the ageing process are subject to gene regulation. It has now been determined that the controlled expression of the RAS oncogene in yeast increases the longevity of this organism, indicating that, conversely, a defined alteration in the activity of a single gene can extend this organism's life span. The results suggest that there is a balance between life-span extension and growth arrest when RAS is expressed. Inasmuch as the homologues of RAS in yeast function to integrate cell metabolism with the cell cycle, these studies raise the possibility that this integrative function may also apply to the co-ordination of successive cell cycles during the life span.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1111/j.1365-2958.1990.tb00568.x

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