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  • 1990-1994  (1)
  • 1990  (1)
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  • 1990-1994  (1)
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    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of the transport process in the growth of a-Si:H prepared by cathodic reactive sputtering (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 477-482 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport process of sputtered Si atoms from the target to the substrate, crossing an argon-hydrogen plasma, is modeled by using Monte Carlo techniques. The hydrogen and argon partial pressures, the dark zone voltage, and the target-substrate distance are varied in the calculations. The effect of the above-mentioned parameters upon the thermalization and energy distribution of atoms arriving at the substrate is calculated, allowing the determination of the growth conditions that minimize the damage produced on the films by highly energetic atoms, while maintaining a reasonable growth rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345228
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