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  • 1995-1999
  • 1990-1994  (24)
  • 1980-1984
  • 1992  (11)
  • 1991  (13)
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  • 1995-1999
  • 1990-1994  (24)
  • 1980-1984
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  • 1
    Electronic Resource
    Electronic Resource
    Substituted 2-(aminomethyl)piperidines: a novel class of selective protein kinase C inhibitors (1991)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 34 (1991), S. 2928-2931 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00113a038
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  • 2
    Electronic Resource
    Electronic Resource
    Ionization coefficients in selected gas mixtures of interest to particle detectors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 15-21 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured and report the total gas-number-density normalized effective ionization coefficient, α¯/N, as a function of the density-reduced electric field, E/N for Ar, CO2, CF4, the binary gas mixtures CF4:Ar (20:80), CO2:Ar(20:80), CO2:CH4(20:80) and for the ternary gas mixtures CO2:CF4:Ar (10:10:80) and H2O:CF4:Ar(2:18:80). We also report the limiting value, (E/N)lim of the above gaseous systems. A comparison of our results on the unitary gases shows good agreement with previous measurements. The results on the ternary mixtures show that the addition of CO2 or H2O to the binary gas mixture CF4:Ar lowers the electron energies and increases α¯/N(E/N).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350730
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  • 3
    Electronic Resource
    Electronic Resource
    Si delta-doped In0.15Ga0.85As/GaAs strained quantum well by atmospheric pressure metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 276-278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si delta-doped In0.15Ga0.85As/GaAs strained quantum wells are demonstrated by atmospheric pressure metalorganic chemical vapor deposition. The samples were characterized by variable temperature Hall effect, high magnetic field magnetoresistance, quantum Hall effect, capacitance-voltage measurements (C-V), and secondary-ion mass spectroscopy. The C-V profile showed a full width at half maximum as narrow as 15 A(ring). Two-dimensional electron gas transport was verified by observing step-like structures in the quantum Hall effect in samples containing sheet densities less than 5×1012 cm−2. Sheet densities as high as 1.0×1013 cm−2 were achieved. C and O contamination were not observed during the Si delta-doping process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352128
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of temperature on the attachment of slow (≤1 eV) electrons to CH3Br (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 9031-9035 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electron attachment rate constant ka(〈ε〉, T) for CH3Br has been measured in a buffer gas of N2 using a high pressure electron swarm apparatus, within the mean electron energy range from thermal (∼0.046 eV) to 0.87 eV and over the temperature range, T, 300–700 K. At room temperature, CH3Br attaches low energy electrons weakly but as T is raised from 300 to 700 K the total electron attachment cross section increases by more than 2 orders of magnitude. At T=300 K the electron attachment cross section exhibits a peak at 0.38 eV which shifts progressively to lower electron energies as T is increased. The thermal value of ka is 1.08×10−11 cm3 s−1 at 300 K and 3.28×10−9 cm3 s−1 at 700 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463329
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  • 5
    Electronic Resource
    Electronic Resource
    Pseudomyxoma peritonei: a review (1991)
    Oxford, UK : Blackwell Publishing Ltd
    International journal of gynecological cancer 1 (1991), S. 0 
    Details
    ISSN: 1525-1438
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract. Carter J, Carson LF, Moradi MM, Adcock LA, Twiggs LB. Pseudomyxoma peritonei: a review, Int J Gynecol Cancer 1991; 1: 243–247.Pseudomyxoma peritonei is an uncommon clinical entity. It is characterized by massive abdominal distension by gelatinous material. It is produced by mucous-secreting peritoneal implants which are secondary, usually, to an ovarian or appendiceal neoplasm. Although remaining localized to the peritoneal cavity and hence thought to be a benign process, the clinical course of the disease, the association, in the majority of cases, with a malignant primary tumor, and the report of a small number of cases with extraperitoneal spread lends support to the belief that this is a malignant disease. Five-year survival is 68% with ten-year survival at 52%. Despite the utilization of numerous adjuvant therapies, the mainstay of treatment remains complete surgical debulking at initial presentation followed by palliative debulking for symptomatic relief.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1525-1438.1991.tb00049.x
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  • 6
    Electronic Resource
    Electronic Resource
    Inverted pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 71-73 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inverted pseudomorphic high electron mobility transistor (HEMT) and inverted HEMT heterostructures are demonstrated by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) for the first time and characterized by transmission electron microscopy (TEM), variable temperature Hall effect, and Shubnikov–de Haas measurements. TEM micrographs of both structures show distinct and sharp heterojunction interfaces without indications of interface roughness at the AlGaAs/channel layer interface. Variable temperature Hall effect measurements reveal a monotonic increase in mobility as the temperature is lowered. For the inverted HEMT, the mobility at 15 K is 90 000 cm2/V s with a sheet density of 8.2×1011 cm−2. The mobility of the inverted pseudomorphic HEMT at 15 K is 73 000 cm2/V s with a sheet density of 1.5×1012 cm−2. Shubnikov–de Haas measurements at 4.2 K in magnetic fields up to 18.5 T show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas. Fast Fourier power transform of the magnetoresistance versus magnetic field shows two subband levels with a total sheet density of 8.7×1011 cm−2 for the inverted HEMT and a total sheet density of 1.55×1012 cm−2 for the inverted pseudomorphic HEMT in close agreement to the variable temperature Hall effect measurement results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104448
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  • 7
    Electronic Resource
    Electronic Resource
    Graded InGaP Schottky diodes on Si-doped InP (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1839-1841 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A compositionally graded InGaP alloy layer grown on a Si-doped InP layer was used to enhance the Schottky barrier height of InP. The fabricated diodes were characterized by Auger depth profiling, variable temperature I-V, capacitance-voltage (C-V), and internal photoemission. Rectification behavior with a low leakage current was achieved (J=8.3×10−7 A/cm2 at −1V). An enhanced Schottky barrier height of 1.18 eV was measured. The large barrier height permitted a reliable C-V profile of a moderately doped InP layer (7×1017 cm−3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107181
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1−xN heterojunctions (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3027-3029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have confirmed the presence of a two-dimensional electron gas (2DEG) in a wide band-gap GaN-AlxGa1−xN heterojunction by observing steplike features in the quantum Hall effect. The 2DEG mobility for a GaN-Al0.13Ga0.87N heterojunction was measured to be 834 cm2/V s at room temperature. It monotonically increased and saturated at a value of 2626 cm2/V s at 77 K. The 2DEG mobility remained nearly constant for temperatures ranging from 77 to 4.2 K. Using Shubnikov–de Haas (SdH) measurements the two-dimensional carrier concentration was estimated to be 1×1011 cm−2. The peak mobility for the 2DEG was found to decrease with the heterojunction aluminum compositions in excess of 13%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106798
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  • 9
    Electronic Resource
    Electronic Resource
    InAlAs/InP modulation doped heterostructures by atmospheric pressure metalorganic chemical vapor deposition using tertiarybutylphosphine (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2572-2574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped and modulation doped InAlAs/InP heterostructures with excellent optical and electrical characteristics are demonstrated using tertiarybutylphosphine (TBP). Low-temperature photoluminescence spectra showed the presence of a type II interface transition indicating the high quality of the interface. Two-dimensional electron gas transport in a modulation doped sample containing a sheet density of 1.8×1012 cm−2 was verified by observing plateaus in the quantum Hall effect. These results confirmed that TBP can be substituted for phosphine for the growth of high quality InAlAs/InP heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108130
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  • 10
    Electronic Resource
    Electronic Resource
    Si delta-doped field-effect transistors by atmospheric pressure metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 458-460 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si delta-doped GaAs field-effect transistors (FETs) are demonstrated by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) and characterized by Hall-effect, capacitance-voltage (C-V), and Shubnikov de-Haas measurements. The Si delta doping was accomplished by interrupting the growth and flowing silane with controlled timing under an arsenic overpressure. Devices with 0.5 μm gate length (Ns=2.2×1012 cm−2) were fabricated with a maximum extrinsic transconductance of 140 mS/mm and a current gain cutoff frequency of 17 GHz. The transconductance as a function of gate voltage showed a plateau region through a range of 1.5 V further supporting spatial confinement of the electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105435
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