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  • 1990-1994  (3)
  • 1991  (3)
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  • 1990-1994  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Atomically precise superlattice potential imposed on a two-dimensional electron gas (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 726-728 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have been able to fabricate a two-dimensional electron gas containing an atomically precise, lateral Kronig–Penney potential of 102 A(ring) periodicity. The structure was formed by modulation-doped molecular beam epitaxy overgrowth on the cleaved edge of a 71 A(ring) GaAs/31 A(ring) AlGaAs compositional superlattice. Low-temperature magnetotransport reveals clear quantum Hall characteristics. From the onset of the Shubnikov–de Haas oscillations at 0.25 T we deduce a lower limit of the mobility of μ(approximately-greater-than)40 000 cm2/V s at an electron density of 3.0×1011 cm−2 and infer that the carriers are crossing more than 200 GaAs/AlGaAs interfaces without losing phase coherence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104528
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Noninteracting beams of ballistic two-dimensional electrons (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 263-265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that two beams of two-dimensional ballistic electrons in a GaAs-AlGaAs heterostructure can penetrate each other with negligible mutual interaction analogous to the penetration of two optical beams. This allows electrical signal channels to intersect in the same plane with negligible crosstalk between the channels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104683
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    GaAs field-effect transistor with an atomically precise ultrashort gate (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1111-1113 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a new type of depletion-mode field-effect transistor (FET) with an inherently ultrashort gate length. The device is fabricated exclusively via molecular beam epitaxy (MBE) in GaAs/AlGaAs by cleaved-edge overgrowth of a suitably prepared MBE-grown substrate. The channel, as well as the gate, of this T-FET consists of a high-mobility, two-dimensional electron gas (2DEG) generated by modulation doping of GaAs quantum wells. The planes of the 2D systems are orthogonal to one another forming a "T'' whose legs approach each other at the intercept to within 200 A(ring). In this way, the thickness of one of the quantum wells (200 A(ring)) established the gate length of the device. All elements of the T-FET are completely immersed into the semiconductor material and all relevant length scales are established to atomic precision by MBE. Schottky barriers do not enter the device characteristics. Our first T-FET reaches transconductances of 196 and 410 mS/mm at 77 and 4.2 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106360
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    Paper (German National Licenses)
    Fulltext
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