Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1790-1792
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Amorphous WO3 thin films have been deposited in a plasma-enhanced chemical vapor deposition system, and were patterned with a 193-nm excimer laser (one pulse, 10–25 mJ/cm2). Negative-tone, sub-0.5-μm lines and spaces were obtained following dry development in a low-power CF4 plasma. The mechanism for laser-induced etch selectivity was studied with angle-resolved x-ray photoelectron spectroscopy. It was inferred from the fluorine photoelectron spectra that the laser induces atomic rearrangements that impede the etch process initiated by fluorine-containing radicals. A possible interpretation is that the rearrangements, which may be partially thermally activated, reduce the volume of the microvoids present in WO3.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106202
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