ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Spectral blue shift of excitonic transition due to quantum confinement in Si0.84Ge0.16/Si strained-layer quantum wells, grown by gas-source Si molecular beam epitaxy, is reported. Intense photoluminescence was observed at elevated temperatures though reduced in intensity due to the thermalization of holes to the Si barriers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107770
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