ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Temperature rises were measured on cleaved, uncoated mirror facets of junction-side-up mounted (Al)GaInP laser diodes as a function of the injection current by Raman spectroscopy via the Stokes/anti-Stokes phonon line intensity ratio and the phonon line shift as well as by reflectance modulation as a novel application for laser mirror characterization. Below the threshold current the temperature rise is due to Joule heating of the drive current across the ohmic resistor and is ΔT(approximately-equal-to)35 K at threshold. Above threshold a significant power-dependent heating caused by absorption of laser radiation is superimposed. In this regime the temperature increase is considerably high, i.e., ΔT≥100 K at 4 mW for 5-μm-wide ridge lasers. The different measurement techniques have produced consistent data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106563
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