Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
72 (1992), S. 1065-1069
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Si-δ-doped GaAs (N2D ≈ 1011 cm−2) samples grown by molecular-beam epitaxy are investigated by using photoreflectance spectroscopy. The oscillations observed above the GaAs fundamental band gap are attributed to the Franz–Keldysh effect in the region between the δ-doped layer and the crystal surface. This ascription is confirmed by detailed studies through varying the cap thickness (250–2500 A(ring)), temperature (10–450 K), and laser pump power (0.05–7 mW/cm2). The surface potential deduced from the Franz–Keldysh oscillations is found to be temperature and laser pump power dependent, which is explained by taking the surface photovoltaic effect into account. The surface Fermi level has been measured by this method and is found to have the value 0.73±0.02 V.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351780
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