Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 1245-1247
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this study, a new epitaxial growth process was developed using phosphine modulation using conventional metalorganic chemical vapor deposition. With this method, phosphine was switched off a short time in each cycle and provided a metal-rich growth surface. With higher surface mobility of indium atoms than that of InP molecules, crystal quality was improved significantly. Photoluminescence full width at half-maximum 5.6 meV at 77 K was achieved under optimum growth conditions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108747
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