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  • 1990-1994  (2)
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  • 1994  (2)
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  • 1990-1994  (2)
  • 1985-1989
  • 1975-1979
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  • 1
    Electronic Resource
    Electronic Resource
    Use of a three-layer quantum-well structure to achieve an absorption edge blueshift (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1251-1253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical calculations are used to propose a novel structure for a quantum-well electro-optic device which gives a large blueshift of the absorption edge on application of an electric field. The structure provides spatial separation of the electron-hole pair in the ground state at zero applied field. This is achieved by use of two materials within the well which have a type II band line-up relative to each other but are type I relative to the barrier material. The combination of InAs0.4P0.6/In0.53Ga0.47As wells with InP barriers is expected to fulfill these requirements and also to operate in the 1.5 μm region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110855
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Room-temperature characterization of InGaAs/AlAs multiple quantum well p-i-n diodes (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3323-3325 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth and fabrication of strained InxGa1−xAs/AlAs multiple quantum well p-i-n diodes, where 5.6%〈x〈15.3%. Characterization via high-resolution x-ray diffraction shows that for the higher indium composition, partial relaxation of the strain has occurred. Using photocurrent spectroscopy, we demonstrate that all the samples studied (whether partially relaxed or not) show (i) strong room-temperature excitonic features and (ii) under an applied electric field, a strong quantum confined Stark effect with retention of clearly resolvable excitons for fields up to ≈300 kV/cm. Both these results can be attributed to the substantial confining potential caused by our use of AlAs barriers. The results demonstrate that the system has potential use for the production of optical modulators. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112404
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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