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  • 1990-1994  (2)
  • 1980-1984
  • 1994  (2)
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  • 1990-1994  (2)
  • 1980-1984
Year
  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature luminescent properties of degenerate p-type GaAs grown by low-pressure metalorganic chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2210-2214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (20 K) luminescent properties of heavily carbon- and zinc-doped GaAs grown by low-pressure metalorganic chemical vapor deposition were investigated. The luminescence linewidth became broader at low temperatures when p(approximately-greater-than)4×1019 cm−3 due to the appearance of a shoulder peak. The main peak shifted to low energy when the dopant concentration was increased; however, the shoulder peak was at around 1.485 eV and was nearly independent of the dopant concentration. The peak of the band-to-acceptor transition occurred at low temperature and dominated the emission spectra of degenerate GaAs. The peak energy of Zn-doped samples was lower than that of C-doped samples because of the existence of defects. The excitation power intensity was varied to investigate the behavior of the shoulder peak for both types of dopants. The shoulder peak was a part of the main peak because of the recombination between the conduction band and the bottom of the impurity band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356283
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Anomalous mobility enhancement in heavily carbon-doped GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5453-5455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous mobility enhancement and metallic-type conductivity were observed in heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition. The 77 K mobility was slightly lower than that of 300 K for hole concentration between 1×1018 and 4×1018 cm−3. However, the 77 K mobility was enhanced from p(approximately-greater-than)4×1018 cm−3, and the 300 K mobility slowly decreased with increasing hole concentration that ranged from 7×1018 to 3×1019 cm−3. As a result, the 77 K mobility was around 50%–60% greater than the 300 K mobility due to the metallic-type conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355706
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
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