Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 2496-2501
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A model calculation for the variation of the normalized potential against the normalized position for a forward-biased, below 2 thermal voltage, high-low junction has been made through numerical computations of Poisson's equation. The model is oriented to a junction with a sufficiently large doping difference between the two sides.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357022
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