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  • 1990-1994  (2)
  • 1994  (2)
  • Polymer and Materials Science  (2)
  • 25.70. Jj
Material
Years
  • 1990-1994  (2)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 560-565 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The preparation of well-characterized silicide thin films for microelectronics needs a control of interfacial reactions and diffusion processes during heat treatment of metal/semiconductor systems. Two sandwich structures of Si(33 nm)/Me(50 nm)/Si(33 nm), where Me = Ni or Cr, with a total thickness of each structure of 116 nm were sputter deposited onto smooth silicon-(111) substrates. The reactions of both metals with amorphous silicon thin films were activated in a differential scanning calorimeter (DSC), at a heating rate of 40°C/min-1, between room temperature and different higher temperatures. Auguer electron spectroscopy depth profiles showed that the Si/Ni/Si sandwich structure reacted almost completely during heat treatment up to 320°C and formed reaction products with a composition close to Ni3Si2. Selected area diffraction patterns revealed that this is a mixture of Ni2Si and NiSi silicides. A much less pronounced reaction between Si and Cr was observed in the Si/Cr/Si sandwich structure, even with heating to 630°C, resulting in CrSi2 silicide and different Cr-Si solid solutions. The results of AES depth profiling studies of the thermally treated sandwich structures are discussed in terms of diffusion processes, movement of interfaces and formation of silicides. The additional information obtained with differential scanning calorimetry and transmission electron microscopy enables a detailed identification of reaction products formed in the early stage of the thermally treated Si/Me/Si structures.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 304-309 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Depth profiling with sample rotation has become a frequently applied method to obtain the in-depth distribution of composition in thin films with high resolution. Sample rotation strongly diminishes the effect of local variations of the ion beam intensity and of the sputtering yield, which are the main cause of increasing surface roughness during sputtering and therefore of profile broadening. Capabilities and limitations of rotational profiling are considered with respect to its dependence on various parameters, such as inhomogeneity of the ion beam instensity, ion incidence angle and rotation speed. In particular, it is shown that non-linear components and excentric movement of the sample lead to periodic features in the profile and to non-vanishing degradation of depth resolution with depth. For smooth sample surfaces, depth resolution improves with increasing ion incidence angle but is much less pronounced, as for profiling with stationary samples. For originally rough surfaces, the deterioration of depth resolution with increasing ion incidence angle is considerably reduced. The key parameter for optimized conditions in rotational profiling is the ratio of sputtering rate and rotation speed. The minimum necessary, useful rotation speed depends on this ratio and on the magnitude of other contributions to the depth resolution that are not affected by sample rotation.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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