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  • 1995-1999  (4)
  • 1995  (4)
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  • 1995-1999  (4)
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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the incident ion/metal flux ratio (1≤Ji /JTi≤15), with the N+2 ion energy Ei constant at (approximately-equal-to)20 eV ((approximately-equal-to)10 eV per incident accelerated N), on the microstructure, texture, and stoichiometry of polycrystalline TiN films grown by ultrahigh-vacuum reactive-magnetron sputtering have been investigated. The layers were deposited in pure N2 discharges on thermally oxidized Si(001) substrates at 350 °C. All films were slightly overstoichiometric with a N/Ti ratio of 1.02±0.03 and a lattice constant of 0.4240±0.0005 nm, equal to that of unstrained bulk TiN. Films deposited with Ji/JTi=1 initially exhibit a mixed texture—predominately (111), (002), and (022)—with competitive columnar growth which slowly evolves into a pure (111) texture containing a network of both inter- and intracolumn porosity with an average column size of (approximately-equal-to)50 nm at t=1.6 μm. In contrast, films grown with Ji/JTi≥5 do not exhibit competitive growth. While still columnar, the layers are dense with an essentially complete (002) preferred orientation and an average column size of (approximately-equal-to)55 nm from the earliest observable stages. The normalized x-ray diffraction (002) intensity ratio in thick layers increased from (approximately-equal-to)0 to 1 as Ji/JTi was varied from 1 to ≥5. Both 111 and 001 interplanar spacings remained constant as a function of film thickness for all Ji/JTi. Thus, contrary to previous models, strain is not the dominant factor in controlling the development of preferred orientation in these films. Moreover, once film texture is fully evolved—whether it be (002) or (111)—during deposition, changing Ji/JTi has little effect as preferred orientation becomes controlled by pseudomorphic forces. Film porosity, however, can be abruptly and reversibly switched by increasing or decreasing Ji/JTi. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 194-203 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal bcc W(001) layers, 140 nm thick, were grown on MgO(001) substrates by ultrahigh-vacuum (UHV) magnetron sputter deposition at Ts=600 °C. Al overlayers, 190 nm thick with strong (001) and (011) preferred orientation and an average grain size of 200 nm, were then deposited at Ts=100 °C without breaking vacuum. Changes in bilayer sheet resistance Rs were monitored continuously as a function of time ta and temperature Ta during UHV annealing. In addition, Rutherford backscattering spectroscopy, x-ray diffraction, transmission electron microscopy (TEM), and scanning TEM, in which cross-sectional specimens were analyzed by energy-dispersive x-ray analysis with a 1 nm resolution, were used to follow area-averaged and local interfacial reaction paths as well as microstructural changes as a function of annealing conditions. The initial reaction products were discontinuous regions of monoclinic-structure WAl4 which exhibit a crystallographic relationship with the underlying W layer. bcc WAl12 forms at a later stage and grows conformally to cover both W and WAl4. WAl4 and WAl12 continue to grow, with W being the primary mobile species, until the Al layer is completely consumed. Information from the microchemical and microstructural analyses was used to model the Rs(Ta,ta) results based upon a multielement equivalent circuit approach which accounts for the observed nonplanar nature of the reaction front. Reaction kinetics and activation energies were determined. The results show that the growth of WAl4 is diffusion limited with an activation energy Ea of 3.1 eV while the formation of WAl12 is reaction limited with Ea=3.3 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2928-2930 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preferred orientation of polycrystalline TiN films grown by ultrahigh-vacuum reactive-magnetron sputter deposition on amorphous SiO2 at 350 °C in pure N2 discharges was controllably varied from (111) to completely (002) by varying the incident ion/metal flux ratio Ji/JTi from 1 to ≥5 with the N+2 ion energy Ei maintained constant at (approximately-equal-to)20 eV ((approximately-equal-to)10 eV per incident accelerated N). All samples were slightly over-stoichiometric with N/Ti=1.02±0.03. Films deposited with Ji/JTi=1 initially exhibit a mixed texture with competitive columnar growth which slowly evolves into a nearly complete (111) texture at film thicknesses greater than 1 μm. However, films grown with Ji/JTi≥5 exhibit an essentially complete (002) preferred orientation from the earliest observable stages. The normalized XRD (002) intensity ratio in thick layers increased from (approximately-equal-to)0 to 1 as Ji/JTi was varied from 1 to ≥5. Both (111) and (001) interplanar spacings remained constant as a function of film thickness yielding a lattice constant of 0.4240±0.0005 nm, equal to that of unstrained bulk TiN. Contrary to previous models, the present results establish that TiN preferred orientation can be controlled without introducing large in-plane compressive stress and/or changes in the strain energy as a function of layer thickness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3102-3104 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputter-deposited Ti1−xWx diffusion barriers in microelectronic devices have been reported by many groups to be Ti deficient with respect to the target composition. In the present experiments, polycrystalline TixW1−x alloys were grown on oxidized Si(001) substrates at temperatures Ts between 100 and 600 °C by ultrahigh-vacuum magnetron cosputter deposition from pure W and Ti targets in 5 mTorr (0.65 Pa) Ar and Xe discharges. Films deposited in Ar were found by Rutherford backscattering and Auger electron spectroscopies to be increasingly Ti deficient with increases in the Ti sputtering rate and/or Ts at a constant W sputtering rate. TRIM calculations and Monte Carlo gas-transport simulations were used, in combination with the experimental results, to show that the Ti loss was due primarily to differential resputtering of the growing film by energetic Ar particles backscattered from the heavier W target. This effect is exacerbated at elevated film growth temperatures by Ti surface segregation in the alloy. The use of Xe, rather than Ar, as the sputtering gas greatly reduces both the flux and the average energy of backscattered particles incident at the substrate such that measurable Ti loss is no longer observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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