Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 2663-2665
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Amorphous 2CdO⋅GeO2 thin films (optical band gap determined by a Tauc plot; 3.4 eV) prepared by rf sputtering were implanted with H+ or Li+ ions to a dose of 2×1016 cm−2. Direct current conductivities in the specimens at 300 K were increased from 3×10−9 S cm−1 to ∼10 S cm−1 after the implantation. The conductivities in these implanted specimens remained almost constant down to 77 K. No deleterious coloring was perceived after implantation. The Hall mobilities (conduction type; n) in the implanted specimens at ∼300 K were ∼5 cm2 V−1 s−1, which are larger by several orders of magnitude than those in existing amorphous semiconductors. Such a large mobility indicates that the electronic state near the bottom of the conduction band of this amorphous material is extended. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114329
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