Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1995-1999  (4)
  • 1995  (4)
Source
Material
Years
  • 1995-1999  (4)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen incorporation into Si-doped InP deposited by gas-source molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3378-3381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen incorporation into Si-doped InP grown by gas-source molecular beam epitaxy was studied. P-H sites were identified by infrared spectroscopy. Proton-implanted reference samples were used to quantify the infrared results. Approximately 0.1 at. % hydrogen was found to be incorporated into InP:Si. Hall measurements indicated that most of the Si atoms were electrically active as donors. Rapid thermal annealing at 600 °C removed most of the bonded hydrogen from the samples. However, this resulted in relatively little change in either the room-temperature free-carrier concentration or Hall mobility. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358626
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of p-type InGaAsP and InGaAs irradiated with He+ and N+ (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5580-5583 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: He+ and N+ ion irradiation of epitaxial p-type In0.76Ga0.24As0.58P0.42 and In0.53Ga0.47As was performed at 300 K to obtain high-resistivity regions. In both the ternary and quaternary samples the resistivity first increases with ion dose. A maximum is reached at a critical dose depending on the ion species and initial doping concentration. Above this dose the conductivity converts to n type and the resistivity steadily decreases to ∼102 Ω cm in InGaAsP and ∼2 Ω cm in InGaAs. After thermal annealing the type converted samples revert to p type. However, for ion doses ≥1013 cm−2 the high resistivities remain stable up to 700 K. The results suggest that simple point defects, rather than complexes are responsible for the changes in the electrical properties of the samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359199
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5167-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal desorption of ultraviolet-ozone oxide on InP substrates prepared for molecular-beam epitaxy has been performed with overpressures of P2, As2, and As4. Surface analysis using reflection high-energy electron diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy and thermodynamic calculations indicate that thermal desorption proceeds via a reaction between the oxide and atomic phosphorus from the substrate to produce volatile phosphorus oxides such as P2O3. The overpressure species serves to stabilize the substrate against surface dissociation once the oxide is removed. In the case of an arsenic overpressure the desorption of the final monolayer of oxide is slowed, relative to the case of phosphorus overpressure, due to the formation of InAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359262
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V-grooved InP substrates with (111)A facet sidewalls (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2358-2360 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs/InP layers have been grown under optimized conditions by gas source molecular beam epitaxy on (100) InP substrates patterned with V grooves having (111)A facet sidewalls. Transmission electron microscopy shows that InGaAs/InP quantum wires are obtained with well thickness variation as high as a factor of 6 and that all epilayers are defect-free. Lateral subband separations are estimated by a simple one-dimensional parabolic potential model with the thickness determined by transmission electron microscopy. Photoluminescence from the InGaAs quantum wires is resolved with a selective etching technique. The quantum wire emission has a significant red shift compared to the adjacent quantum wells on the groove sidewalls and the (100) surface region between grooves. The red shift results from both the increased well thickness and compositional change due to adatom diffusion from sidewalls. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114344
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...