Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 153-155
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Low-temperature grown surface-reflection all-optical switching has been demonstrated with ultrafast photoresponse (1.5 ps), low switching energy (2 pJ), high-contrast (13 dB), polarization independence, and wide operation wavelength range in the 1.55 μm band using low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells. The combination of low-temperature growth and Be-doping contributes to the ultrafast photoresponse. Additionally, the introduction of compressive strain and a mirror with 1% reflectivity greatly enhances optical nonlinearities. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116131
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