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  • 1995-1999  (2)
  • 1985-1989
  • 1996  (2)
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  • 1995-1999  (2)
  • 1985-1989
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  • 1
    Electronic Resource
    Electronic Resource
    Unambiguous determination of crystal-lattice strains in epitaxially grown SiGe/Si multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6683-6688 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for unambiguous reconstruction of crystal-lattice strains in epitaxially grown layers from high-resolution x-ray diffraction data is proposed. The technique uses x-ray diffracted intensity profiles collected for two different radiation wavelengths. We enhance the theory for the previously developed algorithm for model-independent determination of crystal-lattice strain profiles in single crystals with epitaxially grown top-surface layers. The method relies on the retrieval of the scattered x-ray wave phase from its intensity profile via a logarithmic Hilbert transform. This phase-retrieval technique is always associated with the problem of complex polynomial root finding. A practical procedure for the mapping of complex polynomial roots is proposed to distinguish true and virtual zeros. This allows the phase of the diffracted x-ray wave to be retrieved unambiguously. The method was applied to determine physical dimensions and concentration composition of a Si/Si1−xGex/Si alloy multilayer structure typical for SiGe heterobipolar transistor device. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363793
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCy on Si(001) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6711-6715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxial growth of Si1−yCy alloys pseudomorphically strained on the (2×1) reconstructed Si(001) has been investigated as a function of growth conditions. An important question concerns the relation between substitutional and interstitial carbon incorporation, which has a large impact on electrical and optical properties of these layers. We show that the interstitial-to-substitutional carbon ratio is strongly influenced by the growth conditions, such as growth temperature and Si growth rate. Both reduction in growth temperature and increase of the overall growth rate lead to an increase in the substitutional-to-interstitial carbon ratio. However, these changes in growth conditions can also cause some deterioration in crystal quality. The carbon incorporation behavior is well described by first order kinetics. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363797
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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