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  • 1995-1999  (4)
  • 1965-1969
  • 1996  (4)
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  • 1995-1999  (4)
  • 1965-1969
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6884-6887 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconductivity exists in orthorhombic Y1−xPrxSr2Cu2.85Re0.15O7+δ up to a critical concentration (xcr) of 0.65. A progressive decrease in Tc occurs as x increases from 0 to 0.65. A further increase in x leads to a tetragonal transformation and as a consequence the Tc vanishes; however, the orthorhombicity of these Sr-based compounds is much lower than that observed for the Ba analog, Y1−xPrxBa2Cu3O7−δ and, hence, the Tc. On the one hand, crystal chemistry correlations indicate that the Pr ion is in trivalent state while on the other hand, the stabilizing cation, viz., Re, is in hexavalent state which accounts for the excess oxygen (〉7.0) in the system. The high xcr value of the Sr series compared to the Ba series (xcr=0.55) is attributed to the much reduced orbital overlap of the trivalent Pr(4f ) state with the Cu(3dx2−y2)–O(2p) conduction band, via hole localization and/or pair breaking, and is not due to the much discussed hole filling by tetravalent Pr. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 427-432 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) and photoluminescence (PL) measurements have been carried out on low-temperature GaAs (LT GaAs) and LT-GaAs/AlGaAs modulation-doped photodetector (MODPD) structures grown by molecular-beam epitaxy. Samples with LT GaAs grown at 350 °C show several PL lines associated with (i) transitions involving two-dimensional electron gas in LT GaAs near the interface, (ii) band-edge transitions in the bulk LT GaAs, and (iii) transitions involving deep level defect complexes in LT GaAs. In addition a PL emission band at 1.65 eV observed in all the MODPD structures is attributed to a crossover transition at the LT-GaAs/AlGaAs interface. PR spectra of these modulation-doped structures show Franz–Keldysh oscillations which are attributed to high electric fields ((approximately-greater-than)105 V/cm) at the LT-GaAs/AlGaAs interface. PR measurements on bare LT-GaAs layers suggest that the E0 transition in LT GaAs is about 20 meV above that of the normal GaAs E0 gap. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3105-3107 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 15 (1996), S. 107-111 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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