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  • 1995-1999  (2)
  • 1950-1954
  • 1930-1934
  • 1997  (2)
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  • 1995-1999  (2)
  • 1950-1954
  • 1930-1934
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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Terra nova 9 (1997), S. 0 
    ISSN: 1365-3121
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: We present an approach for tracing the fate of anthropogenic CO2, compiling a large data set of stable organic carbon isotope ratios from surface sediments, plankton, and sinking matter in the Atlantic Ocean. The δ13C values of sinking matter are generally lower by 0.5–4.6‰ compared to the surface sediments. This difference increases with increasing latitude, which is explained by a stronger modern increase in surface water [CO2 (aq)] in the Southern Ocean relative to the Tropical/Subtropical Ocean. Preindustrial dissolved CO2 concentrations in Atlantic surface waters, estimated from the δ13Corg of surface sediments, are compared to recently measured surface water [CO2 (aq)] values taken from literature. We obtain only a slight increase in [CO2 (aq)] at lower latitudes but a significant change of about 7 ± 2 μm in high latitudinal surface waters which we attribute to anthropogenic perturbation. Our results suggest that CO2 released by human activities has been stored in Southern Ocean surface waters.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6134-6140 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of pseudomorphic Si0.603Ge0.397/Si and Si0.597Ge0.391C0.012/Si superlattice structures was studied in the temperature range between 750 °C and 900 °C. Carbon incorporation of 1.2% changes the thermal stability of SiGe structures significantly. It suppresses plastic relaxation due to an effective dislocation pinning. No relaxation of the SiGeC sample was observed during annealing up to 875 °C for 3 h. For comparison the SiGe sample relaxed at 800 °C. Carbon strongly increases the interdiffusion of Ge and Si. The activation energy of this diffusion process for a Ge content of 40% decreases from about 4.8 eV for the pure SiGe to about 2.0 eV with an additional C content of 1.2% assuming a neglectable diffusion of the carbon. This leads to a distinct modification of the Ge profile in the investigated temperature range. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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