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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Colloid & polymer science 276 (1998), S. 342-348 
    ISSN: 1435-1536
    Keywords: Key words Amphiphilic urethane acrylate hydrogels ; ionic groups ; polyethers ; heterophasic gel structure ; hydrophobic interaction ; salt- and pH-dependent
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  Amphiphilic urethane acrylate hydrogels containing ionic group (dimethylopropionic acid, DMPA) were prepared by varying the molecular weight of the soft segment (polyether type, PTMG) and type of diisocyanate, and their swelling behaviors and mechanical properties were examined. They showed amphiphilic property due to the hydrophilic ionic groups and hydrophobic polyethers comprising the urethane acrylate network. Heterophasic gel structure could be found for the hydrogels prepared in water, but not for the hydrogels in organic solvent (1,4-dioxane), through scanning electron microscopy. Because of this heterophasic gel structure, they were able to take in a large amount of water as well. The hydrophobic interaction generated by the polyether soft segments between urethane acrylate network chains decreased the degree of swelling, however, increased reversibly the tensile strengths at equilibrium swelling state. MDI-based hydrogel showed low swelling ratio and high tensile strength because of its ordered hard domain structure. These amphiphilic urethane acrylate hydrogels showed salt- and pH-dependent swelling behaviors.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    International journal of thermophysics 19 (1998), S. 281-290 
    ISSN: 1572-9567
    Keywords: GaAs ; impurities ; phonons ; photothermal displacement technique ; semiconductors ; Si ; thermal conductivity ; thermal diffusivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Thermal conductivity and thermal diffusivity of Si and GaAs wafers were measured using the photothermal displacement technique, and the temperature dependence of these two quantities was investigated. Thermal diffusivity was obtained from the phase difference between the heating source and the signal, and thermal conductivity was determined from the maximum value of the signal amplitude in the temperature range 80 to 300 K. It was verified that an increase in doping concentration gives rise to a decrease in thermal conductivity at low temperatures. The experimental results obtained on samples with different types and doping concentrations are consistent with those expected from theoretical considerations.
    Type of Medium: Electronic Resource
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