Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1688-1690
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the growth and characterization of ultraviolet GaN quantum well light emitting diodes. The room-temperature electroluminescence emission was peaked at 353.6 nm with a narrow linewidth of 5.8 nm. In the simple planar devices, without any efforts to improve light extraction efficiency, an output power of 13 μW at 20 mA was measured, limited in the present design by absorption in the GaN cap layer and buffer layer. Pulsed electroluminescence data demonstrate that the output power does not saturate up to current densities approaching 9 kA/cm2. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122246
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