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  • 1
    Electronic Resource
    Electronic Resource
    Design of solid/liquid–liquid/solid trilayer systems for the measurement of diffusion coefficients in liquid metals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3002-3005 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new method for investigation of diffusion processes in liquid metals with solid/liquid–liquid/solid trilayer systems is described. The design of this kind of trilayers enables diffusion processes with no effects from gravity-induced convection and Maragoni-convection conditions. The Ta/Zn–Sn/Si trilayers were prepared and the interdiffusion of liquid zinc and tin at 500 °C was investigated. The interdiffusion coefficients range from 1.0×10−4 to 2.8×10−4 mm2/s, which are less than previous values measured by capillary reservoir technique under 1 g environment where various kinds of convection exist. It is the removing of disturbances of these kinds of convection that brings about the precise interdiffusion coefficients in liquid metals. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149047
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  • 2
    Electronic Resource
    Electronic Resource
    Nicotine Exposure During a Critical Period of Development Leads to Persistent Changes in Nicotinic Acetylcholine Receptors of Adult Rat Brain (1998)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 70 (1998), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Effects of neonatal nicotine exposure on the development of nicotinic acetylcholine receptor (nAChR) α2, α3, α4, α7, and β2 subunit mRNAs and the number of nAChR isoforms in rat brain were studied. The mRNA levels for nAChR subunits were measured by ribonuclease protection assay, and the number of nAChR isoforms was measured with (−)-[3H]nicotine, [3H]epibatidine, and α-[3H]bungarotoxin ([3H]α-Bgt). Pups were divided into two groups: One group received (−)-nicotine treatment (0.1 mg/kg s.c. free base twice per day) during postnatal day (P) 1 to P21 and the other during P8 to P16. The period from P8 to P16 was chosen due to persistent changes that occur in brain nAChRs and in the behavior of adult mice that received (−)-nicotine treatment during P10 to P16. (−)-Nicotine exposure from P1 to P21 significantly up-regulated the number of [3H]-epibatidine and high-affinity (−)-[3H]nicotine binding sites in most of the brain regions studied but did not influence the number of [3H]α-Bgt binding sites. This effect was a transient one: The up-regulated binding sites returned to control level 1 week after withdrawal from nicotine. (−)-Nicotine exposure during P8 to P16 resulted in a significant and long-lasting increase in the number of nAChR isoforms labeled by (−)-[3H]nicotine, but not by [3H]epibatidine, in the cortex, hippocampus, and striatum of adult rat. This treatment converted the low-affinity binding sites of (−)-nicotine into a high-affinity state revealed by the competition studies of (−)-[3H]nicotine/(−)-nicotine. No changes in the mRNA levels of the subunits studied were observed following nicotine treatment during these two periods. These results suggest that the second postnatal week is a critical period during which nicotine treatment can induce permanent effects on the nAChRs in rat brain. The underlying mechanisms involved in the up-regulation of the number of nAChRs observed in this study are posttranscriptional.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1998.70020752.x
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  • 3
    Electronic Resource
    Electronic Resource
    Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1430-1432 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells (QWs). Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition fluctuations and segregation during growth. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121966
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  • 4
    Electronic Resource
    Electronic Resource
    Cathodoluminescence study of disordering of GaAs/AlGaAs quantum wells using an AlAs native oxide and thermal annealing technique (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1095-1100 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlGaAs quantum wells (QWs), selectively disordered using an AlAs native oxide and thermal annealing technique, were studied using spectrally, spatially, and temporally resolved cathodoluminescence (CL). The spectral shift of the QW luminescence was determined as a function of annealing temperature in the oxide and nonoxide regions. Time-resolved CL was used to assess the impact of defects and the built-in field near the oxide/nonoxide transition region on the carrier lifetime. Spatially resolved CL spectroscopy was used to examine changes in the QW luminescence intensity near the transition region. The carrier lifetime was found to increase in the transition region, owing to the enhanced spatial separation of electrons and holes in this region. From CL images and line scans of three samples annealed at different temperatures, a partial dead region is found between oxide and nonoxide regions. Details of the native oxide formation are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368108
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of pressures on the crystallization process of an amorphous Fe73.5Cu1Nb3Si13.5B9 alloy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1918-1923 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Fe73.5Cu1Nb3Si13.5B9 alloys, prepared by a melt-spinning technique, were annealed at a temperature of 823 K under pressures in the range of 1–5 GPa and ambient pressure. The high pressure experiments were carried out in a belt-type pressure apparatus. The microstructure of the annealed alloys has been investigated by x-ray diffraction, electron diffraction, and transmission electron microscopy. Experimental results show that the initial crystalline phase in these annealed alloys is α-Fe solid solution (named as α-Fe phase below), and high pressure has a great influence on the crystallization process of the α-Fe phase. The grain size of the α-Fe phase decreases with the increase of pressure (P). The volume fraction of the α-Fe phase increases with increasing the pressure as the pressure is below 2 GPa, and then decreases (P〉2 GPa). The mechanism for the effects of the high pressure on the crystallization process of amorphous Fe73.5Cu1Nb3Si13.5B9 alloy and latent applications of high-pressure annealing amorphous Fe73.5Cu1Nb3Si13.5B9 alloy have been discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368319
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  • 6
    Electronic Resource
    Electronic Resource
    Band offsets at the InAlGaAs/InAlAs (001) heterostructures lattice matched to an InP substrate (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5852-5854 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first-principles pseudopotential method combined with virtual crystal approximation is used to calculate band offsets at the In0.53(AlzGa1−z)0.47As/In0.52Al0.48As (001) heterostructures lattice matched to an InP substrate. It is found that the valence-band offset (VBO) varies with respect to the aluminum composition as VBO=0.18–0.16z–0.02z2 eV, while the conduction-band offset (CBO) varies as CBO=0.51–0.33z–0.18z2 eV. Our results are in good agreement with the experimental data. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367443
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  • 7
    Electronic Resource
    Electronic Resource
    Experimental evidence of macroscopic resonant tunneling of magnetization in antiferromagnetic ferritin : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6934-6936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Macroscopic resonant quantum tunneling of magnetization has been observed in antiferromagnetic ferritin particles. The dependence of magnetic viscosity on the applied magnetic field has been systematically investigated in the temperature range 1.8–10 K. The zero maximum in field dependence of viscosity and the maximum in the field dependent blocking temperature are interpreted to be due to the resonant spin tunneling between matching spin levels. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367867
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  • 8
    Electronic Resource
    Electronic Resource
    Optical study of silicon-containing amorphous hydrogenated carbon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2820-2825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-containing amorphous hydrogenated carbon films deposited by a plasma-enhanced chemical vapor deposition process were studied using both Raman and ellipsometry spectroscopies. Analyses of the experimental data from both these techniques yielded valuable information about the microstructure of the films. The silicon incorporation in amorphous hydrogenated carbon breaks down large size sp2 carbon clusters and enhances sp3 bonding. The reduction of large sp2 graphitic defects, the enhancement of sp3 bonding, and the associated microstructure changes are responsible for the desired properties of silicon-containing amorphous hydrogenated carbon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367042
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  • 9
    Electronic Resource
    Electronic Resource
    Electro-optic measurement of THz field pulses with a chirped optical beam (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1945-1947 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a linearly chirped optical probe pulse in free-space electro-optic measurements, a temporal wave form of a co-propagating THz field is linearly encoded onto the frequency spectrum of the optical probe pulse, and then decoded by dispersing the probe beam from a grating to a detector array. We achieve acquisition of picosecond THz field pulses without using mechanical time-delay device. We also demonstrate a single-shot electro-optic measurement of the temporal wave form of a THz pulse. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121231
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  • 10
    Electronic Resource
    Electronic Resource
    Coherent, broadband midinfrared terahertz beam sensors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3049-3051 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With proper selection of the electro-optic terahertz (THz) wave emitter and sensor crystals, we demonstrate the coherent measurement of free-space broadband radiation spanning 100 GHz to over 30 THz. This effort supports the feasibility of midinfrared time-domain spectroscopy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122668
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