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  • 1995-1999  (6)
  • 1990-1994
  • 1999  (6)
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  • 1995-1999  (6)
  • 1990-1994
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  • 1
    Electronic Resource
    Electronic Resource
    GaN: Processing, defects, and devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1-78 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371145
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Depth and thermal stability of dry etch damage in GaN Schottky diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 232-234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN Schottky diodes were exposed to N2 or H2 inductively coupled plasmas prior to deposition of the rectifying contact. Subsequent annealing, wet photochemical etching, or (NH4)2S surface passivation treatments were examined for their effect on diode current–voltage (I–V) characteristics. We found that either annealing at 750 °C under N2, or removal of ∼500–600 Å of the surface essentially restored the initial I–V characteristics. There was no measurable improvement in the plasma-exposed diode behavior with (NH4)2S treatments. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124332
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Oxygen diffusion into SiO2-capped GaN during annealing (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2939-2941 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 layers were deposited on p-GaN (hole concentration 9×1017 cm−3) by inductively coupled plasma chemical vapor deposition using an 17O-enriched O2 precursor. The samples were then annealed at 500–900 °C and the SiO2 was removed. Secondary ion mass spectrometry profiling showed significant indiffusion of 17O into the GaN under these conditions, with an incorporation depth of ∼0.18 μm after the 900 °C anneal. The 17O diffusion profiles indicate that the high dislocation density in the GaN strongly affects the effective penetration depth. The GaN remained p type upon incorporation of the oxygen. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125194
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4130-4132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky contacts were formed on n- and p-type GaN after either a conventional surface cleaning step in solvents, HCl and HF or with an additional treatment in (NH4)2S to prevent reformation of the native oxide. Reductions in barrier height were observed with the latter treatment, but there was little change in diode ideality factor. A simple model suggests that an interfacial insulating oxide of thickness 1–2 nm was present after conventional cleaning. This oxide has a strong influence on the contact characteristics on both n- and p-type GaN and appears to be responsible for some of the wide spread in contact properties reported in the literature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125559
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical effects of plasma damage in p-GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2569-2571 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse breakdown voltage of p-GaN Schottky diodes was used to measure the electrical effects of high density Ar or H2 plasma exposure. The near surface of the p-GaN became more compensated through introduction of shallow donor states whose concentration depended on ion flux, ion energy, and ion mass. At high fluxes or energies, the donor concentration exceeded 1019 cm−3 and produced p-to-n surface conversion. The damage depth was established as ∼400 Å based on electrical and wet etch rate measurements. Rapid thermal annealing at 900 °C under a N2 ambient restored the initial electrical properties of the p-GaN. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125080
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  • 6
    Electronic Resource
    Electronic Resource
    Iodine- and Bromine-Based Dry Etching of LaCaMnO3 (1999)
    Springer
    Plasma chemistry and plasma processing 19 (1999), S. 229-239 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; iodine- and bromine-based dry etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Two novel plasma chemistries, BI 3 and BBr 3 , have been employed for dry etching of LaCaMnO 3 thin films. For both mixtures there is some chemical enhancement of etch rates at low halide compositions in the discharge, and the rates are a strong function of ion/neutral ratio. Maximum rates are obtained at ratios near 0.02. Etch yields are typically low (〈0.3) under inductively-coupled plasma (CICP) conditions. Smooth d surface morphologies are obtained over a wide range of conditions, with high-fidelity pattern transfer using SiO 2 or SiN x masks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1021643709200
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    Paper (German National Licenses)
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