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  • 1995-1999  (1)
  • 1999  (1)
  • Asymmetric growth  (1)
  • Flexible manufacturing systems
  • Orthologous evolution
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of computer-aided materials design 6 (1999), S. 103-116 
    ISSN: 1573-4900
    Keywords: Asymmetric growth ; Molecular dynamics simulation ; N-body potential ; Solid state interfacial reaction
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Based on the Finnis–Sinclair formalism, an n-body Ni-Mo potential is constructed and the potential with optimized parameters is able to reproduce some physical properties of several Ni-Mo alloy phases. Molecular dynamics simulation with the constructed potential is performed to study the detailed process of solid-state interfacial reaction in the Ni/Mo multilayers upon isothermal annealing at medium temperatures. It is found that in the sandwich model or the bilayer model, interfacial reaction can take place down to 350 °C and is initiated through interface-crossing atomic diffusion, resulting in alloying and amorphization. The planar growth of the amorphous interlayer shows an asymmetric behavior, i.e., consuming the Ni lattice at a higher speed than the Mo lattice, leading to some intermediate stages where an Ni-enriched amorphous phase coexists with a small amount of unreacted Mo crystal. Moreover, it is revealed that 21 at.% Mo atoms in the Ni lattice reaches a critical value, resulting in a crystal-to-amorphous transition, while the critical concentration for collapsing of the Mo lattice is up to 25 at.% Ni. It follows that the above difference in the solubilities is regarded as the physical origin of asymmetric growth. Kinetically, the growth of the amorphous layer is found to follow a t 1/2 law, indicating that solid-state amorphization is indeed through a diffusion-limited reaction.
    Type of Medium: Electronic Resource
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