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  • 2000-2004  (2)
  • 2000  (2)
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  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1475-1478 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a scanning tunneling microscope (STM) designed to operate between 275 mK and room temperature, in magnetic fields up to 14 T and in ultrahigh vacuum (UHV). The system features a compact STM connected to an UHV compatible 3He refrigerator fitting into a bottom loading cryostat with a superconducting magnet. In this configuration, the cryostat is sitting on top of the UHV chamber, resulting in a very short distance between the STM access and the experimental position. It further enables proper thermal anchoring of the entire STM setup, allowing millikelvin temperatures to be reached in true UHV conditions. We achieve a hold time of about 40 h at 275 mK and a turnaround time of 10 h between room and base temperature. We demonstrate atomic resolution and present tunneling spectra obtained at 275 mK on the high-Tc superconductors Bi2Sr2CaCu2O8+δ and YBa2Cu3O7−δ. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1701-1703 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on scanning tunneling microscopy measurements of the piezoelectric response in ferroelectric heterostructures grown by off-axis rf magnetron sputtering. The samples are composed of a single-crystalline ferroelectric film of Pb(Zr0.2Ti0.8)O3 deposited on a conducting substrate and covered with an ultrathin metallic film of gold. The high quality of the c-axis oriented ferroelectric layer is evidenced by sharp polarization hysteresis loops. By applying a voltage to the bilayer and recording the inverse piezoelectric effect with the scanning tunneling microscope, we demonstrate the ability to measure the phase response as well as the ferroelectric switching. We obtained strain-field plots with a butterfly loop shape, and a quantitative measurement of the longitudinal piezoelectric coefficient (d33). © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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