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  • 2000-2004  (2)
  • 1965-1969
  • 2001  (2)
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  • 2000-2004  (2)
  • 1965-1969
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  • 1
    Electronic Resource
    Electronic Resource
    Single-electron tunneling in highly doped silicon nanowires in a dual-gate configuration (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8159-8162 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral patterning of highly doped silicon-on-insulator films allows us to observe conductance oscillations due to single-electron charging effects. In our devices, silicon nanostructures are embedded into a metal–oxide–silicon configuration. The single-electron effects can be tuned both by an in-plane sidegate, as well as by a metallic topgate, a technology which is compatible with large-scale integration of single-electron devices with dimensions down to 10 nm. We compare the influence of different gating electrodes, important for ultralarge scale integration, on the electron islands. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368399
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Fabrication and integration possibilities of ultrasmall quantum dots in silicon-on-insulator material (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 942-946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-electron transistors utilizing Coulomb blockade effects are promising candidates for future silicon based nanoelectronics. We present the fabrication of such transistors and measurements that reveal Coulomb blockade behavior. Various silicon quantum dots are investigated up to room temperature. We employ a dual gate configuration with which we are able to control our devices by both a metallic top gate as well as by an in-plane gate. This design principle enhances the integration density. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379352
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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