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  • 2000-2004  (2)
  • 2001  (2)
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  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. II. Selective deposition in the regions defined by electron-beam irradiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3887-3893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports a selective-area deposition process using chlorosilane-treated ultrathin SiO2 masks on which the patterns are directly defined by irradiation of a focused electron beam (EB). Three different chlorosilane gases (SiH2Cl2, SiHCl3, and SiCl4) were first adsorbed on the SiO2 surfaces, and the regions with reactive sites were defined by taking advantage of electron-stimulated desorption (ESD) of the surface adsorbates. For the SiHCl3- and SiH2Cl2-treated surfaces, the nucleation density was remarkably high in the EB-irradiated regions. Such nucleation enhancement was less significant for the SiCl4-treated surface. For the purpose of direct patterning and selective growth, we conclude that SiHCl3 is the optimum treatment gas because it effectively suppresses Si nucleation outside of the EB-irradiated patterns. The overall ESD sensitivity of the SiHCl3-adsorbed mask was 50 mC/cm2, and a significant nucleation enhancement was observed by irradiation of 7 mC/cm2. We also report an extension of this selective-area processing to window opening through the ultrathin SiO2 mask layer. The factors limiting the minimum feature size of the grown Si structures and the opened windows are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402978
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  • 2
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. I. Suppression and enhancement of Si nucleation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3879-3886 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the nucleation processes in chemical vapor deposition (CVD) of Si on SiO2 surfaces that were treated with different chlorosilane gases SiHnCl4−n, where n=0, 1, or 2. These gases chemisorb on the SiO2 surface in a self-limiting manner. At 493 K, the saturation coverage was reached at 4×108 L exposure for the SiH2Cl2 gas, and at 2×109 L for the SiHCl3 and SiCl4 gases. CVD of Si was carried out on the chlorosilane-saturated SiO2 surfaces using Si2H6 as a source gas at 853 K. It has been found that the SiCl4 and SiHCl3 treatments effectively passivate the nucleation centers on the SiO2 surfaces, while the SiH2Cl2 treatment drastically enhances Si nucleation. The reaction mechanisms causing these differences are discussed, considering the structural changes of the adsorbed chlorosilane fragments at the CVD temperature. Application of the SiCl4 treatment to the patterned SiO2 mask for selective-area epitaxial growth of Si is demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402977
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
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